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VS-ST110S14P0PBF の電気的特性と機能

VS-ST110S14P0PBFのメーカーはVishayです、この部品の機能は「Phase Control Thyristors」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-ST110S14P0PBF
部品説明 Phase Control Thyristors
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-ST110S14P0PBF Datasheet, VS-ST110S14P0PBF PDF,ピン配置, 機能
www.vishay.com
VS-ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
TO-209AC (TO-94)
PRODUCT SUMMARY
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
Package
Diode variation
110 A
400 V, 1600 V
1.52 V
150 mA
-40 °C to 140 °C
TO-209AC (TO-94)
Single SCR
FEATURES
• Center gate
• International standard case TO-209AC (TO-94)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Hermetic glass-metal case with ceramic insulator
(Glass-metal seal over 1200 V)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
110
90
175
2700
2830
36.4
33.2
400 to 1600
100
-40 to 125
UNITS
A
°C
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VOLTAGE
TYPE NUMBER
CODE
VS-ST110S
04
08
12
16
VDRM/VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM AT
PEAK AND OFF-STATE VOLTAGE
PEAK VOLTAGE
TJ = TJ MAXIMUM
V V mA
400 500
800
1200
900
1300
20
1600
1700
Revision: 11-Mar-14
1 Document Number: 94393
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-ST110S14P0PBF pdf, ピン配列
www.vishay.com
VS-ST110SPbF Series
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
PGM
PG(AV)
IGM
+ VGM
- VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
TJ = TJ maximum
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
VALUES
TYP. MAX.
5
1
2.0
20
5.0
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 -
10
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction
temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
TStg
RthJC
RthCS
DC operation
Mounting surface, smooth, flat and greased
Mounting torque, ± 10 %
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
-40 to 125
-40 to 150
°C
0.195
0.08
K/W
15.5 (137)
14 (120)
Nm
(lbf · in)
130 g
TO-209AC (TO-94)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.035
0.025
120°
0.041
0.042
90° 0.052
60° 0.076
0.056
0.079
TJ = TJ maximum
K/W
30° 0.126
0.127
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
3 Document Number: 94393
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-ST110S14P0PBF 電子部品, 半導体
www.vishay.com
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10 tr<=1 µs
(b)
(a)
VS-ST110SPbF Series
Vishay Semiconductors
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
Device: ST110S Series Frequency Limited by PG(AV)
0.1 1
Instantaneous Gate Current (A)
10
100
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code VS- ST 11 0 S 16 P 0 V L PbF
1 2 3 4 5 6 7 8 9 10 11
1 - Vishay Semiconductors product
2 - Thyristor
3 - Essential part marking
4 - 0 = Converter grade
5 - S = Compression bonding stud
6 - Voltage code x 100 = VRRM (see Voltage Ratings table)
7 - P = Stud base 20UNF threads
8 - 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
2 = Flag terminals (for cathode and gate terminals)
9-
V = Glass-metal seal (only up to 1200 V)
None = Ceramic housing (over 1200 V)
10 - Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
11 - None = Standard production
- PbF = Lead (Pb)-free
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95078
Revision: 11-Mar-14
6 Document Number: 94393
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-ST110S14P0PBF

Phase Control Thyristors

Vishay
Vishay


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