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VS-ST103S08PFL1P の電気的特性と機能

VS-ST103S08PFL1PのメーカーはVishayです、この部品の機能は「Inverter Grade Thyristors」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-ST103S08PFL1P
部品説明 Inverter Grade Thyristors
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-ST103S08PFL1P Datasheet, VS-ST103S08PFL1P PDF,ピン配置, 機能
www.vishay.com
VS-ST103SP Series
Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 105 A
TO-209AC (TO-94)
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
ITSM at 50 Hz
ITSM at 60 Hz
IGT
TC/Ths
TO-209AC (TO-94)
Single SCR
105 A
400 V, 800 V
1.73 V
3000 A
3150 A
200 mA
85 °C
FEATURES
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
VALUES
105
85
165
3000
3150
45
41
400 to 800
10 to 25
-40 to 125
UNITS
A
°C
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VS-ST103S
04
08
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
30
Revision: 11-Mar-14
1 Document Number: 94365
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-ST103S08PFL1P pdf, ピン配列
www.vishay.com
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and off-state
leakage current
VS-ST103SP Series
Vishay Semiconductors
SYMBOL
dV/dt
IRRM,
IDRM
TEST CONDITIONS
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
TJ = TJ maximum, rated VDRM/VRRM applied
VALUES UNITS
500 V/μs
30 mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
PGM
PG(AV)
IGM
+VGM
-VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated VDRM applied
VALUES
40
5
5
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to case
TStg
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS Mounting surface, smooth, flat and greased
Mounting torque, ± 10 %
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125
-40 to 150
°C
0.195
0.08
K/W
15.5
(137)
14
(120)
N·m
(lbf in)
130 g
TO-209AC (TO-94)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
180°
0.034
0.025
120°
0.040
0.042
90°
0.052
0.056
TJ = TJ maximum
60° 0.076 0.079
30° 0.126 0.127
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
Revision: 11-Mar-14
3 Document Number: 94365
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-ST103S08PFL1P 電子部品, 半導体
www.vishay.com
VS-ST103SP Series
Vishay Semiconductors
10 000
1000
100
10
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
2000
5000
10 000
1000 400 200 100 50 Hz
ST103S Series
Sinusoidal pulse
tp TC = 60 °C
10000
1000
ST103S Series
Sinusoidal pulse
tp TC = 85 °C
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
10 000 5000 2000 1000 400 200 100 50 Hz
100 1000
Pulse Basewidth (µs)
10 000
100
10
Fig. 11 - Frequency Characteristics
100 1000
Pulse Basewidth (µs)
10 000
10 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
10 000
Snubber circuit
ST103S Series
Rs = 22 Ω
Trapezoidal pulse
Cs = 0.15 µF
VD = 80 % VDRM
tp
TC = 85 °C
dI/dt = 50 A/µs
1000
1500
5000 2500 1000 400 200 100 50 Hz
1000
100
10
tp
ST103S Series
Trapezoidal pulse
TC = 60 °C
dI/dt = 50 A/µs
100 1000
Pulse Basewidth (µs)
10 000
100
10
Fig. 12 - Frequency Characteristics
5000 1500
2500
1000
400 200 100
50 Hz
100 1000
Pulse Basewidth (µs)
10 000
10 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
10 000
ST103S Series Snubber circuit
Trapezoidal pulse Rs = 22 Ω
tp
TC = 85 °C
dI/dt = 100 A/µs
Cs = 0.15 µF
VD = 80 % VDRM
1000
100
10
1500
5000
2500
1000 400 200 100 50 Hz
10 000
ST103S Series
Trapezoidal pulse
tp
TC = 60 °C
dI/dt = 100 A/µs
100
1000
10 000
Pulse Basewidth (µs)
1000
5000
10 000
2500
1500 1000 400 200 100 50 Hz
100
10
100 1000
Pulse Basewidth (µs)
10 000
Fig. 13 - Frequency Characteristics
Revision: 11-Mar-14
6 Document Number: 94365
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VS-ST103S08PFL1P

Inverter Grade Thyristors

Vishay
Vishay


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