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VSKT105-16P の電気的特性と機能

VSKT105-16PのメーカーはVishayです、この部品の機能は「ADD-A-PAK Generation VII Power Modules」です。


製品の詳細 ( Datasheet PDF )

部品番号 VSKT105-16P
部品説明 ADD-A-PAK Generation VII Power Modules
メーカ Vishay
ロゴ Vishay ロゴ 




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VSKT105-16P Datasheet, VSKT105-16P PDF,ピン配置, 機能
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
www.vishay.com
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
ADD-A-PAK
PRODUCT SUMMARY
IT(AV) or IF(AV)
Type
105 A
Modules - Thyristor, Standard
MECHANICAL DESCRIPTION
The ADD-A-PAK Generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV) or IF(AV)
85 °C
IO(RMS)
As AC switch
ITSM,
IFSM
50 Hz
60 Hz
50 Hz
I2t
60 Hz
I2t
VRRM
TStg
Range
TJ
VALUES
105
235
2000
2094
20
18.26
200
400 to 1600
-40 to 130
-40 to 130
UNITS
A
kA2s
kA2s
V
°C
Revision: 14-Jan-14
1 Document Number: 94628
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VSKT105-16P pdf, ピン配列
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
SYMBOL
PGM
PG(AV)
IGM
- VGM
VGT
IGT
VGD
IGD
TEST CONDITIONS
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V
resistive load
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V
resistive load
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
VALUES
12
3
3
10
4.0
2.5
1.7
270
150
80
0.25
6
UNITS
W
A
V
mA
V
mA
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
SYMBOL
IRRM,
IDRM
TEST CONDITIONS
TJ = 130 °C, gate open circuit
Maximum RMS insulation voltage
VINS
50 Hz
Maximum critical rate of rise of off-state voltage dV/dt TJ = 130 °C, linear to 0.67 VDRM
VALUES
20
3000 (1 min)
3600 (1 s)
1000
UNITS
mA
V
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction operating temperature range
Storage temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
to heatsink
busbar
TJ
TStg
RthJC
RthCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound.
Approximate weight
Case style
JEDEC®
VALUES
- 40 to 130
UNITS
°C
0.22
°C/W
0.1
4
Nm
3
75 g
2.7 oz.
AAP GEN VII (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
180°
120°
90°
60°
30°
VSK.105..
0.04
0.048 0.063 0.085 0.125
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
0.033
0.052
0.067
0.088
0.127
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
°C/W
Revision: 14-Jan-14
3 Document Number: 94628
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VSKT105-16P 電子部品, 半導体
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
www.vishay.com
Vishay Semiconductors
1000
Per leg
100
10
Tj = 130°C
Tj = 25°C
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Instantaneous on-state voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
1
Steady state value
RthJC = 0.22 °C/W
(DC operation)
0.1
0.01
Per leg
0.001
0.001
0.01
0.1
1
Square wave pulse duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
10
100
Rec tangular gate pulse
a)Rec ommended load line for
rated di/ dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Rec ommended load line for
<= 30% rated di/ dt: 15 V, 40 ohms
10 tr = 1 µs, tp >= 6 µs
(b )
(a )
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
1
VGD
IGD
0.1
0.001
0.01
(4) (3) (2) (1)
VISRK..105.. Series
Frequenc y Limited by PG(AV)
0.1 1 10 100 1000
Instantaneous gate current (A)
Fig. 12 - Gate Characteristics
Revision: 14-Jan-14
6 Document Number: 94628
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
VSKT105-16P

ADD-A-PAK Generation VII Power Modules

Vishay
Vishay
VSKT105-16S90P

ADD-A-PAK Generation VII Power Modules

Vishay
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