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S-LSI1013XT1G の電気的特性と機能

S-LSI1013XT1GのメーカーはLRCです、この部品の機能は「P-Channel 1.8-V (G-S) MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 S-LSI1013XT1G
部品説明 P-Channel 1.8-V (G-S) MOSFET
メーカ LRC
ロゴ LRC ロゴ 




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S-LSI1013XT1G Datasheet, S-LSI1013XT1G PDF,ピン配置, 機能
P-Channel 1.8-V (G-S) MOSFET
LESHAN RADIO COMPANY, LTD.
LSI1013XT1G
S-LSI1013XT1G
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Gate-Source ESD Protected: 2000 V
D High-Side Switching
D Low On-Resistance: 1.2 W
D Low Threshold: 0.8 V (typ)
D Fast Switching Speed: 14 ns
D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
ORDERING INFORMATION
Device
Marking
Shipping
LSI1013XT1G
S-LSI1013XT1G
LSI1013XT3G
S-LSI1013XT3G
B
B
3000/Tape&Reel
10000/Tape&Reel
SC-89
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
3
B
12
B = Specific Device Code
M = Month Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (diode conduction)b
Maximum Power Dissipationb for SC-75
Maximum Power Dissipationb for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
ESD
-400
-300
-275
175
90
275
160
-20
"6
-350
-275
-1000
-250
150
80
250
140
55 to 150
2000
Notes
d. Pulse width limited by maximum junction temperature.
e. Surface Mounted on FR4 Board.
Unit
V
mA
mW
_C
V
Rev .O 1/6

1 Page





S-LSI1013XT1G pdf, ピン配列
LESHAN RADIO COMPANY, LTD.
LSI1013XT1G , S-LSI1013XT1G
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
1.0
VGS = 5 thru 3 V
0.8
Output Characteristics
2.5 V
1000
800
Transfer Characteristics
TJ = –55_C
25_C
0.6 600 125_C
2V
0.4 400
1.8 V
0.2 200
0.0
0.0
4.0
0.5 1.0 1.5 2.0 2.5
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
3.0
3.2
VGS = 1.8 V
2.4
VGS = 2.5 V
1.6
VGS = 4.5 V
0.8
0.0
0
200 400 600 800
ID – Drain Current (mA)
Gate Charge
5
VDS = 10 V
ID = 250 mA
4
1000
3
2
0
0.0
120
0.5 1.0 1.5 2.0 2.5
VGS – Gate-to-Source Voltage (V)
Capacitance
3.0
100
80 Ciss
60
40
Coss
20
Crss
0
0
4
8 12 16 20
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
1.4
VGS = 4.5 V
ID = 350 mA
1.2
VGS = 1.8 V
1.0 ID = 150 mA
1 0.8
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Qg – Total Gate Charge (nC)
0.6
–50 –25
0
25 50 75 100 125
TJ – Junction Temperature_( C)
Rev .O 3/6


3Pages


S-LSI1013XT1G 電子部品, 半導体
LESHAN RADIO COMPANY, LTD.
LSI1013XT1G , S-LSI1013XT1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
Rev .O 6/6

6 Page



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部品番号部品説明メーカ
S-LSI1013XT1G

P-Channel 1.8-V (G-S) MOSFET

LRC
LRC


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