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PDF S-LSI1012N3T5G Data sheet ( Hoja de datos )
| Número de pieza | S-LSI1012N3T5G | |
| Descripción | N-Channel 1.8-V (G-S) MOSFET | |
| Fabricantes | LRC | |
| Logotipo |  |
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N-Channel 1.8-V (G-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Gate-Source ESD Protected: 2000 V
D High-Side Switching
D Low On-Resistance: 0.7 W
D Low Threshold: 0.8 V (typ)
D Fast Switching Speed: 10 ns
D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
ORDERING INFORMATION
Device
Marking
Shipping
LSI1012N3T5G
S-LSI1012N3T5G
A2
10000/Tape&Reel
LESHAN RADIO COMPANY, LTD.
LSI1012N3T5G
S-LSI1012N3T5G
3
21
SOT883
3 Drain
Gate 1
Source 2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (diode conduction)b
Maximum Power Dissipationb
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TA = 25_C
TA = 85_C
TA = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
PD
R θJA
TJ, Tstg
ESD
20
"6
600 500
400 350
1000
275 250
250
500
−-55 to 150
2000
Unit
V
mA
mW
°C/W
_C
V
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board.
Rev .O 1/6
1 page  
LESHAN RADIO COMPANY, LTD.
LSI1012N3T5G , S-LSI1012N3T5G
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
833_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Rev .O 5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet S-LSI1012N3T5G.PDF ] | |
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