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AP6680AGM-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP6680AGM-HF |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP6680AGM-HFダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Advanced Power
Electronics Corp.
AP6680AGM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
Description
AP6680A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
D
S
BVDSS
RDS(ON)
ID
D
D
D
D
SO-8
30V
11mΩ
12A
G
S
S
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
30 V
+20 V
12 A
9.8 A
60 A
2.5 W
Linear Derating Factor
0.02
W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
℃/W
1
201408256
1 Page AP6680AGM-HF
50
T A = 25 o C
10V
7.0 V
40 5.0 V
4.5 V
30 V G = 3.0 V
20
10
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
T A = 150 o C
10V
7.0 V
40 5.0 V
4.5 V
30 V G = 3.0 V
20
10
0
01234567
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
16
ID=8A
T A =25 ℃
14
12
.
10
8
6
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
12
T j =150 o C
T j =25 o C
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
1.8
I D = 12 A
1.6 V G =10V
1.4
1.2
1.0
0.8
0.6
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
0.0
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 6. On-Resistance vs.
Drain Current
150
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ AP6680AGM-HF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP6680AGM-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |