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PDF AUIRFSL4115 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFSL4115 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRFS4115
AUIRFSL4115
HEXFET® Power MOSFET
VDSS
150V
RDS(on) typ.
max.
10.3m
12.1m
ID 99A
DD
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
S
G
D2Pak
AUIRFS4115
G
Gate
S
GD
TO-262
AUIRFSL4115
D
Drain
S
Source
Base part number
AUIRFSL4115
AUIRFS4115
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFSL4115
AUIRFS4115
AUIRFS4115TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
EAS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy (Thermally Limited)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
99
70
396
375
2.5
± 20
18
230
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
mJ
°C
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient (PCB Mount), D2 Pak
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
2015-10-27
1 page  
1
AUIRFS/SL4115
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
J J
1 1
R1R 1
Ci= iRi
Ci= iRi
R2R 2
2 2
CC
Ri (°C/W)
0.245
0.155
i (sec)
0.0059149
0.0006322
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
IF = 42A
40
VR = 130V
TJ = 25°C
TJ = 125°C
30
50
IF = 62A
40
VR = 130V
TJ = 25°C
TJ = 125°C
30
20 20
10 10
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 14 - Typical Recovery Current vs. dif/dt
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
2500
2000
1500
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
3000
2400
1800
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
1000
1200
500 600
0
0 200 400 600 800 1000
diF /dt (A/µs)
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
5
Fig. 17 - Typical Stored Charge vs. dif/dt
2015-10-27
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AUIRFSL4115.PDF ] | |
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