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AUIRF7759L2TRのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | AUIRF7759L2TR |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとAUIRF7759L2TRダウンロード(pdfファイル)リンクがあります。 Total 12 pages
AUTOMOTIVE GRADE
PD - 96426
AUIRF7759L2TR
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead Free, RoHS Compliant and Halogen Free
• Automotive Qualified *
AUIRF7759L2TR1
Automotive DirectFET® Power MOSFET
V(BR)DSS
75V
RDS(on) typ.
1.8mΩ
max.
2.3mΩ
ID (Silicon Limited)
160A
Qg 200nC
SS
SS
D GS
S
D
S
S
Applicable DirectFET® Outline and Substrate Outline
SB SC
M2 M4
L 8 DirectFET®ISOMETRIC
L4 L6 L8
Description
The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRF7759L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
PD @TA = 25°C
EAS
IAR
EAR
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
fPower Dissipation
fPower Dissipation
Power Dissipation
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
gRepetitive Avalanche Energy
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJ-Can
RθJ-PCB
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Parameter
Junction-to-PCB Mounted
fLinear Derating Factor
Max.
75
±20
160
113
26
375
640
125
63
3.3
257
See Fig.18a, 18b, 16, 17
270
-55 to + 175
Typ.
Max.
––– 45
12.5 –––
20 –––
––– 1.2
––– 0.5
0.83
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
03/28/12
1 Page AUIRF7759L2TR/TR1
Qualification Information†
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
Moisture Sensitivity Level
Machine Model
LARGE-CAN
ESD
RoHS Compliant
Human Body Model
Charged Device
Model
MSL1
Class M4 (+/- 800V)
(per AEC-Q101-002)
Class H2 (+/- 6000V)
(per AEC-Q101-001)
N/A
(per AEC-Q101-005)
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
3Pages AUIRF7759L2TR/TR1
10000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100μsec
DC
10 1msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
10msec
0.1
0
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 13. Maximum Safe Operating Area
10
1200
1000
800
ID
TOP 15.39A
23.97A
BOTTOM 96A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
1
0.1
0.01
0.001
0.0001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
R1R1
R2R2
R3R3
R4R4
Ri (°C/W) τi (sec)
0.10804
0.000171
τJ τJ
τCτ 0.61403
0.053914
τ1 τ1
τ2 τ2
τ3 τ3
τ4 τ4
0.45202
0.006099
SINGLE PULSE
( THERMAL RESPONSE )
CiC= iτi/Ri/iRi
0.00001
0.036168
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
1000
100
10
Duty Cycle = Single Pulse
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 16. Typical Avalanche Current vs.Pulsewidth
6
1.0E-01
www.irf.com
6 Page | |||
ページ | 合計 : 12 ページ | ||
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部品番号 | 部品説明 | メーカ |
AUIRF7759L2TR | Power MOSFET ( Transistor ) | Infineon |
AUIRF7759L2TR | Power MOSFET ( Transistor ) | International Rectifier |
AUIRF7759L2TR1 | Power MOSFET ( Transistor ) | International Rectifier |