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AUIRF7759L2TR の電気的特性と機能

AUIRF7759L2TRのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 AUIRF7759L2TR
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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AUIRF7759L2TR Datasheet, AUIRF7759L2TR PDF,ピン配置, 機能
AUTOMOTIVE GRADE
PD - 96426
AUIRF7759L2TR
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
AUIRF7759L2TR1
Automotive DirectFET® Power MOSFET ‚
V(BR)DSS
75V
RDS(on) typ.
1.8mΩ
max.
2.3mΩ
ID (Silicon Limited)
160A
Qg 200nC
SS
SS
D GS
S
D
S
S
Applicable DirectFET® Outline and Substrate Outline 
SB SC
M2 M4
L 8 DirectFET®ISOMETRIC
L4 L6 L8
Description
The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRF7759L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
PD @TA = 25°C
EAS
IAR
EAR
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
fPower Dissipation
fPower Dissipation
™Power Dissipation
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
gRepetitive Avalanche Energy
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJ-Can
RθJ-PCB
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Parameter
Junction-to-PCB Mounted
fLinear Derating Factor
Max.
75
±20
160
113
26
375
640
125
63
3.3
257
See Fig.18a, 18b, 16, 17
270
-55 to + 175
Typ.
Max.
––– 45
12.5 –––
20 –––
––– 1.2
––– 0.5
0.83
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
03/28/12

1 Page





AUIRF7759L2TR pdf, ピン配列
AUIRF7759L2TR/TR1
Qualification Information
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
Moisture Sensitivity Level
Machine Model
LARGE-CAN
ESD
RoHS Compliant
Human Body Model
Charged Device
Model
MSL1
Class M4 (+/- 800V)
(per AEC-Q101-002)
Class H2 (+/- 6000V)
(per AEC-Q101-001)
N/A
(per AEC-Q101-005)
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3


3Pages


AUIRF7759L2TR 電子部品, 半導体
AUIRF7759L2TR/TR1
10000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100μsec
DC
10 1msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
10msec
0.1
0
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 13. Maximum Safe Operating Area
10
1200
1000
800
ID
TOP 15.39A
23.97A
BOTTOM 96A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
1
0.1
0.01
0.001
0.0001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
R1R1
R2R2
R3R3
R4R4
Ri (°C/W) τi (sec)
0.10804
0.000171
τJ τJ
τCτ 0.61403
0.053914
τ1 τ1
τ2 τ2
τ3 τ3
τ4 τ4
0.45202
0.006099
SINGLE PULSE
( THERMAL RESPONSE )
CiC= iτi/Ri/iRi
0.00001
0.036168
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
1000
100
10
Duty Cycle = Single Pulse
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 16. Typical Avalanche Current vs.Pulsewidth
6
1.0E-01
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部品番号部品説明メーカ
AUIRF7759L2TR

Power MOSFET ( Transistor )

Infineon
Infineon
AUIRF7759L2TR

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
AUIRF7759L2TR1

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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