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AUIRF7669L2TR の電気的特性と機能

AUIRF7669L2TRのメーカーはInfineonです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 AUIRF7669L2TR
部品説明 Power MOSFET ( Transistor )
メーカ Infineon
ロゴ Infineon ロゴ 




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AUIRF7669L2TR Datasheet, AUIRF7669L2TR PDF,ピン配置, 機能
 
AUTOMOTIVE GRADE
AUIRF7669L2TR
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
 Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg (typical)
100V
3.5m
4.4m
114A
81nC
 
D
S
S
GS
S
S
S
D
S
S
 
Applicable DirectFET® Outline and Substrate Outline
L8 DirectFET® ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7669L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET packaging
platform coupled with the latest silicon technology allows the AUIRF7669L2TR to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for
high current automotive applications..
Base Part Number  
Package Type  
Standard Pack
Form
Quantity
Orderable Part Number  
AUIRF7669L2
DirectFET Large Can
Tape and Reel
4000
AUIRF7669L2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
TP
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested Value)
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
100
±20
114
81
19
375
460
100
3.3
260
850
See Fig. 16, 17, 18a, 18b
260
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C  
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-11-16

1 Page





AUIRF7669L2TR pdf, ピン配列
 
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr   Reverse Recovery Time
Qrr Reverse Recovery Charge
AUIRF7669L2TR
   
 
Min. Typ. Max. Units
Conditions
––– ––– 114
MOSFET symbol
showing the
D
A integral reverse
G
––– ––– 460
p-n junction diode.
S
––– ––– 1.3
––– 61 92
––– 140 210
V TJ = 25°C, IS = 68A, VGS = 0V
ns TJ = 25°C, IF = 68A, VDD = 50V
nC dv/dt = 100A/µs
Surface mounted on 1 in.
square Cu board (still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.11mH, RG = 25, IAS = 68A.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
Ris measured at TJ of approximately 90°C.
3 2015-11-16


3Pages


AUIRF7669L2TR 電子部品, 半導体
 
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec
100µsec
100 10msec
DC
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0 1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 13. Maximum Safe Operating Area
10
AUIRF7669L2TR
1200
1000
800
ID
TOP 12A
19A
BOTTOM 68A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
1
D = 0.50
0.20
0.1
0.01
0.001
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
J J
1 1
R1R1
R2R2
2 2
R3R3
3 3
R4R4
CC
44
Ri (°C/W)
0.1080
0.6140
0.4520
Ci= iRi
Ci= iRi
1.47e-05
i (sec)
0.000171
0.053914
0.006099
0.036168
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 16. Typical Avalanche Current vs. Pulse Width
1.0E-02
1.0E-01
6 2015-11-16

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
AUIRF7669L2TR

Automotive DirectFET Power MOSFET

International Rectifier
International Rectifier
AUIRF7669L2TR

Power MOSFET ( Transistor )

Infineon
Infineon
AUIRF7669L2TR1

Automotive DirectFET Power MOSFET

International Rectifier
International Rectifier


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