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AUIRF7665S2TR の電気的特性と機能

AUIRF7665S2TRのメーカーはInfineonです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 AUIRF7665S2TR
部品説明 Power MOSFET ( Transistor )
メーカ Infineon
ロゴ Infineon ロゴ 




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AUIRF7665S2TR Datasheet, AUIRF7665S2TR PDF,ピン配置, 機能
 
AUTOMOTIVE GRADE
AUIRF7665S2TR
Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 100W per Channel into 8with No Heatsink
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
 Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
RG (typical)
Qg (typical)
100V
51m
62m
3.5
8.3nC
  
Applicable DirectFET® Outline and Substrate Outline
SB DirectFET® ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7665S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging platform to
produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET® package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application
note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize
thermal transfer in automotive power systems.
This HEXFET® Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET® packaging platform offers low parasitic inductance and
resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that
accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Base Part Number  
AUIRF7665S2
Package Type  
DirectFET Small Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number  
AUIRF7665S2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
IAR
EAR
TP
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
100
±20
14.4
10.2
4.1
77
58
30
2.4
37
56
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C  
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-10-5

1 Page





AUIRF7665S2TR pdf, ピン配列
 
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr   Reverse Recovery Time
Qrr Reverse Recovery Charge
AUIRF7665S2TR
   
 
Min. Typ. Max. Units
Conditions
––– ––– 14.4
MOSFET symbol
showing the
D
A integral reverse
G
––– ––– 58
p-n junction diode.
S
––– ––– 1.3
––– 33 –––
––– 38 –––
V TJ = 25°C, IS = 8.9A, VGS = 0V
ns TJ = 25°C, IF = 8.9A, VDD = 25V
nC dv/dt = 100A/µs
Surface mounted on 1 in.
square Cu board (still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.944mH, RG = 25, IAS = 8.9A.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
Ris measured at TJ of approximately 90°C.
3 2015-10-5


3Pages


AUIRF7665S2TR 電子部品, 半導体
  AUIRF7665S2TR
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µsec
1msec
1 10msec
0.1 Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.01
0
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 13. Maximum Safe Operating Area
10
160
140
ID
TOP 1.64A
120
3.04A
BOTTOM 8.90A
100
80
60
40
20
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
175
Fig 14. Maximum Avalanche Energy vs. Temperature
1
0.1
0.01
0.001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
J J
1 1
R1R1
R2R2
2 2
R3R3
3 3
R4R4
CC
44
Ri (°C/W)
0.49687
0.00517
2.55852
Ci= iRi
Ci= iRi
1.94004
i (sec)
0.000119
8.231486
0.018926
0.002741
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
10
0.01
1 0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.01
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 16. Typical Avalanche Current vs. Pulse Width
1.0E-02
6
1.0E-01
2015-10-5

6 Page



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共有リンク

Link :


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