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ACE2020M の電気的特性と機能

ACE2020MのメーカーはACE Technologyです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 ACE2020M
部品説明 N-Channel MOSFET
メーカ ACE Technology
ロゴ ACE Technology ロゴ 




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ACE2020M Datasheet, ACE2020M PDF,ピン配置, 機能
ACE2020M
N-Channel 200-V MOSFET
Description
ACE2020M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications:
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current b
TC=25°C
Continuous Source Current (Diode Conduction) a
Power Dissipation
TC=25°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
200
±20
12
50
47
50
-55 to 175
Unit
V
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
Symbol Maximum Unit
RθJA
RθJC
40
°C/W
3
Notes
a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics.
b. Pulse width limited by maximum junction temperature.
VER 1.1 1

1 Page





ACE2020M pdf, ピン配列
ACE2020M
N-Channel 200-V MOSFET
Electrical Characteristics
TA=25, unless otherwise specified.
Parameter
Symbol
Conditions
Static
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 uA
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±20 V
Zero Gate Voltage Drain Current
VDS = 160 V, VGS = 0 V
IDSS VDS = 160 V, VGS = 0 V, TJ = 55°C
On-State Drain Current
ID(on)
VDS = 5 V, VGS = 10 V
Drain-Source On-Resistance
rDS(on)
VGS = 10 V, ID = 9.6 A
VGS = 5.5 V, ID = 8.3 A
Forward Transconductance
Diode Forward Voltage
gfs VDS = 15 V, ID = 9.6 A
VSD IS = 23 A, VGS = 0 V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 100 V, VGS = 4.5 V, ID = 9.6 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 100 V, RL = 10.55 Ω , ID = 9.6 A,
VGEN = 10 V, RGEN = 6 Ω
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss VDS = 15 V, VGS = 0 V, f =1 MHz
ReverseTransfer Capacitance
Crss
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Min. Typ.
1
24
4.4
0.95
4
1.7
1.8
10
8
27
13
807
81
38
Max. Unit
±100
1
25
260
300
V
nA
uA
A
S
V
nC
nS
pF
VER 1.1 3


3Pages


ACE2020M 電子部品, 半導体
Packing Information
TO-252
ACE2020M
N-Channel 200-V MOSFET
SYMBOL
E
L
L1
L2
L3
L4
L5
D
H
b
b2
b3
e
A
A1
c
c2
D1
E1
θ
DIMENSIONAL REQMTS
MIN NOM MAX
6.40 6.60 6.731
1.40 1.52 1.77
2.743 REF
0.508 BSC
0.89 1.27
0.64 1.01
6.00
9.40
0.64
0.77
5.21
2.20
0
0.45
0.45
5.30
4.40
0
6.10 6.223
10.00 10.40
0.76 0.88
0.84 1.14
5.34 5.46
2.286 BSC
2.30 2.38
0.127
0.50 0.60
0.50 0.58
10
VER 1.1 6

6 Page



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部品番号部品説明メーカ
ACE2020M

N-Channel MOSFET

ACE Technology
ACE Technology


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