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ACE2020MのメーカーはACE Technologyです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | ACE2020M |
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部品説明 | N-Channel MOSFET | ||
メーカ | ACE Technology | ||
ロゴ | |||
このページの下部にプレビューとACE2020Mダウンロード(pdfファイル)リンクがあります。 Total 7 pages
ACE2020M
N-Channel 200-V MOSFET
Description
ACE2020M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current b
TC=25°C
Continuous Source Current (Diode Conduction) a
Power Dissipation
TC=25°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
200
±20
12
50
47
50
-55 to 175
Unit
V
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
Symbol Maximum Unit
RθJA
RθJC
40
°C/W
3
Notes
a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics.
b. Pulse width limited by maximum junction temperature.
VER 1.1 1
1 Page ACE2020M
N-Channel 200-V MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Static
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 uA
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±20 V
Zero Gate Voltage Drain Current
VDS = 160 V, VGS = 0 V
IDSS VDS = 160 V, VGS = 0 V, TJ = 55°C
On-State Drain Current
ID(on)
VDS = 5 V, VGS = 10 V
Drain-Source On-Resistance
rDS(on)
VGS = 10 V, ID = 9.6 A
VGS = 5.5 V, ID = 8.3 A
Forward Transconductance
Diode Forward Voltage
gfs VDS = 15 V, ID = 9.6 A
VSD IS = 23 A, VGS = 0 V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 100 V, VGS = 4.5 V, ID = 9.6 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 100 V, RL = 10.55 Ω , ID = 9.6 A,
VGEN = 10 V, RGEN = 6 Ω
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss VDS = 15 V, VGS = 0 V, f =1 MHz
ReverseTransfer Capacitance
Crss
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Min. Typ.
1
24
4.4
0.95
4
1.7
1.8
10
8
27
13
807
81
38
Max. Unit
±100
1
25
260
300
V
nA
uA
A
mΩ
S
V
nC
nS
pF
VER 1.1 3
3Pages Packing Information
TO-252
ACE2020M
N-Channel 200-V MOSFET
SYMBOL
E
L
L1
L2
L3
L4
L5
D
H
b
b2
b3
e
A
A1
c
c2
D1
E1
θ
DIMENSIONAL REQMTS
MIN NOM MAX
6.40 6.60 6.731
1.40 1.52 1.77
2.743 REF
0.508 BSC
0.89 1.27
0.64 1.01
6.00
9.40
0.64
0.77
5.21
2.20
0
0.45
0.45
5.30
4.40
0。
6.10 6.223
10.00 10.40
0.76 0.88
0.84 1.14
5.34 5.46
2.286 BSC
2.30 2.38
0.127
0.50 0.60
0.50 0.58
10。
VER 1.1 6
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ ACE2020M データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
ACE2020M | N-Channel MOSFET | ACE Technology |