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PDF ACE2006M Data sheet ( Hoja de datos )
| Número de pieza | ACE2006M | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | ACE Technology | |
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ACE2006M
N-Channel 60-V MOSFET
Description
ACE2006M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current b
TC=25°C
Continuous Source Current (Diode Conduction) a
Power Dissipation
TC=25°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
60
±20
19
75
42
50
-55 to 150
Unit
V
V
A
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
Symbol Maximum Unit
RθJA
RθJC
40
°C/W
3
Notes
a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics.
b. Pulse width limited by maximum junction temperature.
VER 1.1 1
1 page  
Typical Performance Characteristics
ACE2006M
N-Channel 60-V MOSFET
Qg - Total Gate Charge (nC)
7. Gate Charge
TJ –Junction Temperature(°C)
8. Normalized On-Resistance Vs
Junction Temperature
VDS Drain to Source Voltage (V)
9. Safe Operating Area
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.1 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ACE2006M.PDF ] | |
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