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STU339S の電気的特性と機能

STU339SのメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Logic Level Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 STU339S
部品説明 N-Channel Logic Level Enhancement Mode Field Effect Transistor
メーカ SamHop Microelectronics
ロゴ SamHop Microelectronics ロゴ 




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STU339S Datasheet, STU339S PDF,ピン配置, 機能
STU/D339SGre
Pro
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Max
9.6 @ VGS=10V
30V 40A
15 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
IDM -Pulsed a
TC=25°C
TC=70°C
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
30
±20
40
32
117
56
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Aug,17,2012
www.samhop.com.tw

1 Page





STU339S pdf, ピン配列
STU/D339S
80
V GS =10V
60
40
V GS =4.5V
V GS =5V
V GS =4V
V GS =3.5V
20
V GS =3V
0
0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
25
20
15
VGS=4.5V
10
VGS=10V
5
0
1 20 40 60 80
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
35
28
Tj=125 C -55 C
21
14
25 C
7
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
1.8
1.6 V G S =10V
ID=20A
1.4
1.2
V G S =4.5V
1.0 ID=16A
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
1.10 ID=250uA
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,17,2012
3 www.samhop.com.tw


3Pages


STU339S 電子部品, 半導体
STU/D339S
PACKAGE OUTLINE DIMENSIONS
TO-251
Ver 1.0
Aug,17,2012
6 www.samhop.com.tw

6 Page



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部品番号部品説明メーカ
STU339S

N-Channel Logic Level Enhancement Mode Field Effect Transistor

SamHop Microelectronics
SamHop Microelectronics


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