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STU03N20のメーカーはSamHop Microelectronicsです、この部品の機能は「N-Channel Logic Level Enhancement Mode Field Effect Transistor」です。 |
部品番号 | STU03N20 |
| |
部品説明 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
メーカ | SamHop Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTU03N20ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
STU03N20
Sa mHop Microelectronics C orp.
STD03N20Green
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
200V
3.28 @ VGS=10V
2A
3.59 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous c
IDM -Pulsed a c
TC=25°C
TC=70°C
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
200
±20
2
1.6
5.8
4
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jun,03,2014
www.samhop.com.tw
1 Page STU03N20
STD03N20
2.0
VGS=10V
1.6
VGS=4.5V
1.2 VGS=3.5V
0.8
0.4 VGS=3V
0
0 2 4 6 8 10 12
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
4.8
4.0
3.2 V GS =4.5V
2.4 V GS =10V
1.6
0.8
0
0.01
0.4 0.8 1.2 1.6
ID, Drain Current(A)
2.0
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
1.5
1.2
0.9
Tj=125 C
0.6
25 C -55 C
0.3
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.5
2.2 V G S =10V
ID=1A
1.9
1.6
1.3 V G S =4.5V
ID=1A
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Jun,03,2014
3 www.samhop.com.tw
3Pages STU03N20
STD03N20
TO-252
E
b3
L3
D
1
H
23
L4
b
e
A
c2
b2
DETAIL "A"
c
L2
L
L1
A1
DETAIL "A"
E1
D1
Ver 1.0
SYMBOLS
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
MILLIMETERS
MIN MAX
2.200
2.380
0.000
0.127
0.635
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.210
5.380
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
0.890
1.270
0.640
1.010
0° 10°
Jun,03,2014
6 www.samhop.com.tw
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
STU03N20 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop Microelectronics |