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V30DL50CHM3 の電気的特性と機能

V30DL50CHM3のメーカーはVishayです、この部品の機能は「Dual Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 V30DL50CHM3
部品説明 Dual Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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V30DL50CHM3 Datasheet, V30DL50CHM3 PDF,ピン配置, 機能
www.vishay.com
V30DL50C-M3, V30DL50CHM3
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.29 V at IF = 5 A
TMBS ® eSMP® Series
TO-263AC (SMPD)
K
1
2
Top View
Bottom View
V30DL50C
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A
TJ max.
Package
2 x 15 A
50 V
300 A
0.42 V
150 °C
TO-263AC (SMPD)
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
Operating junction and storage temperature range
TJ, TSTG
V30DL50C
50
30
15
300
-40 to +150
UNIT
V
A
A
°C
Revision: 13-Dec-13
1 Document Number: 89963
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





V30DL50CHM3 pdf, ピン配列
www.vishay.com
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
0.1
TA= 25 °C
0.01
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
TJ = 25 °C
f = 1.0 MHz
VSIG = 50 mVp-p
1000
V30DL50C-M3, V30DL50CHM3
Vishay General Semiconductor
100
Junction to Ambient
10
1
0.1
0.01
0.1
1
10 100
t -Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
50
Epoxy printed circuit
45 board FR4 copper
thickness = 70 µm
40
35
30
25
20
12345
S (cm2)
678 9
Copper Pad Areas (cm2)
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
100
0.1 1 10 100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 13-Dec-13
3 Document Number: 89963
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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部品番号部品説明メーカ
V30DL50CHM3

Dual Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


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