DataSheet.jp

V60D100C の電気的特性と機能

V60D100CのメーカーはVishayです、この部品の機能は「Dual High-Voltage Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 V60D100C
部品説明 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




このページの下部にプレビューとV60D100Cダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

V60D100C Datasheet, V60D100C PDF,ピン配置, 機能
www.vishay.com
V60D100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
TMBS ® eSMP® Series
SMPD
K
1
2
Top View
Bottom View
V60D100C
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
100 V
IFSM
320 A
VF at IF = 30 A (TA = 125 °C)
0.66 V
TJ max.
150 °C
MECHANICAL DATA
Case: SMPD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V60D100C
100
60
30
320
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Revision: 14-Mar-13
1 Document Number: 87952
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





V60D100C pdf, ピン配列
www.vishay.com
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
1000
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
V60D100C
Vishay General Semiconductor
100
Junction to Ambient
10
1
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
50
Epoxy printed circiut
45 board FR4 copper
thickness = 70 μm
40
35
30
25
S(cm2)
20
123456789
Copper Pad Areas (cm2)
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 14-Mar-13
3 Document Number: 87952
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ V60D100C データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
V60D100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay
V60D100C-M3

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay
V60D100CHM3

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap