|
|
VSSAF3L45のメーカーはVishayです、この部品の機能は「Surface Mount Trench MOS Barrier Schottky Rectifier」です。 |
部品番号 | VSSAF3L45 |
| |
部品説明 | Surface Mount Trench MOS Barrier Schottky Rectifier | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとVSSAF3L45ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
www.vishay.com
VSSAF3L45
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® SlimSMATM
Top View
Bottom View
DO-221AC
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
45 V
IFSM
IR at VR = 45 V (125 °C)
80 A
5 mA
VF at IF = 3.0 A (125 °C)
0.37 V
TJ max.
150 °C
Package
DO-221AC (SlimSMA)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection in
commercial, industrial, and automotive applications.
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward rectified current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV) (1)
IFSM
Operating junction and storage temperature range
TJ, TSTG
Note
(1) Free air, mounted on recommended copper pad area
VSSAF3L45
3L45
45
3.0
80
-40 to +150
UNIT
V
A
A
°C
Revision: 09-Jan-15
1 Document Number: 89935
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page www.vishay.com
100
10
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TA = 150 °C
10
TA = 125 °C
1 TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typcial Reverse Leakage Characteristics
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1 1 10
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
VSSAF3L45
Vishay General Semiconductor
1000
Junction to Ambient
100
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Fig. 6 - Typcial Transient Thermal Impedance
120
100 Epoxy printed circuit board
FR4 copper thickness = 70 μm
80
60
40
20
S (cm2)
0
0 2 4 6 8 10
Copper Pad Areas (cm2)
Fig. 7 - Thermal Resistance Junction to Ambient vs.
Copper Pad Areas
Revision: 09-Jan-15
3 Document Number: 89935
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ VSSAF3L45 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
VSSAF3L45 | Surface Mount Trench MOS Barrier Schottky Rectifier | Vishay |