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V8P12のメーカーはVishayです、この部品の機能は「High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier」です。 |
部品番号 | V8P12 |
| |
部品説明 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとV8P12ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
www.vishay.com
V8P12
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.53 V at IF = 4 A
TMBS® eSMP® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
FEATURES
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
EAS
VF at IF = 8.0 A
TJ max.
Package
8.0 A
120 V
140 A
100 mJ
0.63 V
150 °C
TO-277A (SMPC)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Operating junction and storage temperature range
EAS
IRRM
TJ, TSTG
V8P12
V812
120
8.0
140
100
0.5
-40 to +150
UNIT
V
A
A
mJ
A
°C
Revision: 16-Dec-14
1 Document Number: 89170
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page www.vishay.com
V8P12
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
Resistive or Inductive Load
8
6
4
2
TL Measured
at the Cathode Band Terminal
0
0 25 50 75 100 125 150 175
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
TA = 150 °C
10
TA = 125 °C
1 TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
7
D = 0.5 D = 0.8
6 D = 0.3
D = 0.2
5
D = 0.1
4
D = 1.0
3
T
2
1
D = tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
TA = 150 °C
10 TA = 125 °C
1 TA = 100 °C
100
Junction to Ambient
10
0.1
0.1
TA = 25 °C
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
1.0
Fig. 3 - Typical Instantaneous Forward Characteristics
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Revision: 16-Dec-14
3 Document Number: 89170
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages | |||
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