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V15WL45C-M3 の電気的特性と機能

V15WL45C-M3のメーカーはVishayです、この部品の機能は「Dual Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 V15WL45C-M3
部品説明 Dual Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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V15WL45C-M3 Datasheet, V15WL45C-M3 PDF,ピン配置, 機能
www.vishay.com
V15WL45C-M3
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 3 A
TMBS®
TO-252 (D-PAK)
K
A
A
V15WL45C
AK
A HEATSINK
FEATURES
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 7.5 A (TA = 125 °C)
TJ max.
Package
2 x 7.5 A
45 V
90 A
0.40 V
150 °C
TO-252 (D-PAK)
Diode variation
Dual common cathode
MECHANICAL DATA
Case: TO-252 (D-PAK)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Operating junction and storage temperature range
TJ, TSTG
V15WL45C
45
15
7.5
90
-40 to +150
UNIT
V
A
A
°C
Revision: 04-Dec-13
1 Document Number: 89975
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





V15WL45C-M3 pdf, ピン配列
www.vishay.com
100
TA = 150 °C
10
TA = 125 °C
1 TA = 100 °C
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
V15WL45C-M3
Vishay General Semiconductor
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Device
Revision: 04-Dec-13
3 Document Number: 89975
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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部品番号部品説明メーカ
V15WL45C-M3

Dual Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


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