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PDF 2SC4548 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4548 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | WEJ | |
| Logotipo |  |
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RoHS
2SC4548
2SC4548 TRANSISTOR (NPN)
DFEATURES
Power dissipation
TPCM:
500 mW (Tamb=25℃)
.,LCollector current
ICM: 200 mA
Collector-base voltage
OV(BR)CBO:
400 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage
RCollector cut-off current
TEmitter cut-off current
CDC current gain
Collector-emitter saturation voltage
EBase-emitter saturation voltage
LTransition frequency
ECollector output capacitance
JTurn-ON Time
Turn-OFF Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Cob
ton
toff
Test conditions
Ic=10µA, IE=0
Ic=1mA, IB=0
IE=10µA, IC=0
VCB=300V, IE=0
VEB=4V, IC=0
VCE=10V, IC=50mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=30V, IC=10mA
VCB=30V, IE=0, f=1MHz
VCC=150V, Ic=50mA,
IB1=-IB2=5mA
MIN TYP MAX UNIT
400 V
400 V
5V
0.1 µA
0.1 µA
60 200
0.6 V
1V
70 MHz
4 pF
0.25
µs
5 µs
WECLASSIFICATION OF hFE(1)
Rank
D
E
Range
60-120
100-200
Marking
CN
1 page | ||
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| PDF Descargar | [ Datasheet 2SC4548.PDF ] | |
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