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VS-32CTQ030PbF の電気的特性と機能

VS-32CTQ030PbFのメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-32CTQ030PbF
部品説明 Schottky Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-32CTQ030PbF Datasheet, VS-32CTQ030PbF PDF,ピン配置, 機能
VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
TO-220AB
Anode
2 Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AB
2 x 15 A
25 V, 30 V
0.40 V
97 mA at 125 °C
150 °C
Common cathode
13 mJ
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-32CTQ... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM tp = 5 μs sine
VF 15 Apk, TJ = 125 °C
TJ Range
VALUES
30
25/30
900
0.40
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL VS-32CTQ025PbF VS-32CTQ025-N3 VS-32CTQ030PbF VS-32CTQ030-N3 UNITS
Maximum DC reverse voltage
VR
25 25 30 30 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 115 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
30
900
250
13
3
UNITS
A
mJ
A
Revision: 11-Oct-11
1 Document Number: 94202
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-32CTQ030PbF pdf, ピン配列
VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 150 °C
TJ = 125 °C
10 TJ = 25 °C
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 000
1000
100
10
1
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01 TJ = 25 °C
0.001
0
5 10 15 20 25 30
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
100
0
5 10 15 20 25 30 35
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
D = 0.50
0.1 D = 0.33
D = 0.25
D = 0.20
0.01
0.001
0.00001
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
Revision: 11-Oct-11
3 Document Number: 94202
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-32CTQ030PbF 電子部品, 半導体
TO-220AB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
(6)
E
E2 (7)
Q
A
ØP
0.014 M B A M
B
Seating
A plane
A
A1
(6)
H1
(7)
(H1)
(6) D
Detail B
(E)
Thermal pad
D2 (6)
1 23
DD
CC
L1 (2)
D1
1 23
C
E1 (6)
3 x b 3 x b2
Detail B
L
Base metal
(b, b2)
Plating
2x e
e1
0.015 M B A M
Lead tip
cA
A2
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.25 4.65 0.167 0.183
A1 1.14 1.40 0.045 0.055
A2 2.56 2.92 0.101 0.115
b 0.69 1.01 0.027 0.040
b1
0.38 0.97 0.015 0.038
4
b2 1.20 1.73 0.047 0.068
b3
1.14 1.73 0.045 0.068
4
c 0.36 0.61 0.014 0.024
c1
0.36 0.56 0.014 0.022
4
D
14.85 15.25 0.585 0.600
3
D1 8.38 9.02 0.330 0.355
D2 11.68 12.88 0.460 0.507 6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
View A - A
c c1 (4)
b1, b3 (4)
Section C - C and D - D
Conforms to JEDEC outline TO-220AB
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN. MAX.
10.11 10.51
6.86 8.89
- 0.76
2.41 2.67
4.88 5.28
6.09 6.48
13.52 14.02
3.32 3.82
3.54 3.73
2.60 3.00
90° to 93°
INCHES
MIN. MAX.
0.398 0.414
0.270 0.350
- 0.030
0.095 0.105
0.192 0.208
0.240 0.255
0.532 0.552
0.131 0.150
0.139 0.147
0.102 0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
(7) Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
Document Number: 95222 For technical questions within your region, please contact one of the following:
Revision: 08-Mar-11
www.vishay.com
1

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部品番号部品説明メーカ
VS-32CTQ030PbF

Schottky Rectifier ( Diode )

Vishay
Vishay


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