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PDF 2SK3426 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3426 | |
| Descripción | Silicon Junction FETs | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Silicon Junction FETs (Small Signal)
2SK3426
Silicon N-Channel Junction
For impedance conversion in low frequency
For electret capacitor microphone
I Features
• High mutual conductance gm
• Low noise voltage of NV
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Drain-source voltage
Drain-gate voltage
Drain-source current
Drain-gate current
Gate-source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDSO
VDGO
IDSO
IDGO
IGSO
PD
Topr
Tstg
20
20
2
2
2
100
−20 to +80
−55 to +125
Unit
V
V
mA
mA
mA
mW
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
Unit: mm
0.10+–00..0025
1: Drain
2: Source
3: Gate
SSSMini3-F1 Package
Marking Symbol: 4E
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Drain current
Mutual conductance
Noise voltage
Voltage gain
Voltage gain difference
Symbol
Conditions
Min Typ Max
ID *1 VDS = 2.0 V, RD = 2.2 kΩ ± 1%
100
330
IDSS VDS = 2.0 V, RD = 2.2 kΩ ± 1%, VGS = 0 107
310
gm VD = 2.0 V, VGS = 0, f = 1 kHz
660 1 300
NV VD = 2.0 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, A-Curve
8
GV1 VD = 2.0 V, RD = 2.2 kΩ ± 1%
−8.5 −3.0
CO = 5 pF, eG = 10 mV, f = 1 kHz
GV2 VD = 12 V, RD = 2.2 kΩ ± 1%
−5.0 − 0.5
CO = 5 pF, eG = 10 mV, f = 1 kHz
GV3 VD = 1.5 V, RD = 2.2 kΩ ± 1%
−9.0 −3.5
CO = 5 pF, eG = 10 mV, f = 1 kHz
∆GV. f*2 VD = 2.0 V, RD = 2.2 kΩ ± 1%
0
CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz
1.5
GV2 − GV1
0 4.0
GV1 − GV3
0 1.5
Note) *1: ID is assured for IDSS.
*2: ∆GV. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)
Unit
µA
µS
µV
dB
dB
Publication date: April 2002
SJF00033AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK3426.PDF ] | |
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