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PDF TGA2579-FL Data sheet ( Hoja de datos )
| Número de pieza | TGA2579-FL | |
| Descripción | 25 Watt Ku-Band GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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TGA2579-FL
25 Watt Ku-Band GaN Power Amplifier
Applications
Ku-band communications
Product Features
Frequency Range: 13.75 - 15.35 GHz
Saturated Output Power: 44 dBm
Power-added Efficiency: 30%
Small Signal Gain: 32 dB
Bias: Vd = 25 V, Idq = 1A, Vg = -3.4V typical
Functional Block Diagram
General Description
The TriQuint TGA2579-FL is a packaged Ku-band
power amplifier fabricated on TriQuint’s production-
released, 0.25um GaN on SiC process. Operating
from 13.75 to 15.35 GHz, the TGA2579-FL typically
provides 44 dBm of saturated output power, 30%
power-added efficiency and 32dB of small signal
gain.
The TGA2579-FL features low loss ground-signal-
ground (GSG) RF transitions designed to interface
with a coplanar waveguide multilayer board.
Ideally suited for Ku-band communications, the
TGA2579-FL supports key commercial and de-
fense-related frequency bands.
TriQuint’s 0.25um GaN on SiC process offers su-
perior electrical performance through Ku-band
while maintaining high reliability. In addition, the
use of SiC substrates provides optimum thermal
performance necessary for high power operation.
Lead-free and RoHS compliant.
Pin Configuration
Pin #
1
2,6
3,5,10,12
4
7
8
9
11
13
14
Symbol
Vd
Vg
Gnd
RF In
Vd
Vd
Vdet
RF Out
N/C
Vd
Ordering Information
Part No.
ECCN
TGA2579-FL 3A001.b.2.b
Description
Ku-band Power
Amplifier
Preliminary Data Sheet: 1/8/2013
© 2012 TriQuint Semiconductor, Inc.
- 1 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
1 page  
TGA2579-FL
25 Watt Ku-Band GaN Power Amplifier
Typical Performance
Output Power, Gain, Id vs. Input Power
Vd=25V, Idq=1A, Vg=-3.4V typ, 15.5GHz, T=25oC, CW
50 4.0
45 3.5
40 3.0
35 2.5
30 2.0
25 1.5
20
15
10
0
Output Power
Gain
Id
5 10 15
1.0
0.5
0.0
20 23
Input Power (dBm)
Output Power vs. Input Power
Vd=25V, Idq=1A, Vg=-3.4V typ, T=25oC, CW
45
40
35 13.5 GHz
14.4 GHz
30 15.5 GHz
25
0
5 10 15 20
Input Power (dBm)
25
Gain vs. Input Power
Vd=25V, Idq=1A, Vg=-3.4V typ, T=25oC, CW
35
30
25
20
15
0
13.5 GHz
14.4 GHz
15.5 GHz
5 10 15 20
Input Power (dBm)
25
Id vs. Input Power
Vd=25V, Idq=1A, Vg=-3.4V typ, T=25oC, CW
4.0
3.0
2.0
13.5 GHz
14.4 GHz
1.0 15.5 GHz
0.0
0
5 10 15 20
Input Power (dBm)
25
50
40
30
20
10
0
5
PAE vs. Input Power
Vd=25V, Idq=1A, Vg=-3.4V typ, T=25oC, CW
13.5 GHz
14.4 GHz
15.5 GHz
10 15 20
Input Power (dBm)
25
Preliminary Data Sheet: 1/8/2013
© 2012 TriQuint Semiconductor, Inc.
- 5 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
5 Page 
TGA2579-FL
25 Watt Ku-Band GaN Power Amplifier
Product Compliance Information
ESD Information
ESD rating:
Value:
Test:
Standard:
TBD
Passes > TBD V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ECCN
US Department of State: 3A001.b.2.b
Solderability
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Haz-
ardous Substances in Electrical and Electronic
Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
Assembly Notes
1. Clean the board or module with alcohol. Allow it to fully dry
2. Nylock screws are recommended for mounting the TGA2579-FL to the board
3. To improve the thermal and RF performance, we recommend a heat sink attached
to the bottom of the board and/or apply thermal compound to the bottom of the
TGA2579-FL
4. Apply solder to each pin of the TGA2579-FL.
5. Clean the assembly with alcohol.
Preliminary Data Sheet: 1/8/2013
© 2012 TriQuint Semiconductor, Inc.
- 11 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TGA2579-FL.PDF ] | |
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