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VS-MBR2535CTPbF の電気的特性と機能

VS-MBR2535CTPbFのメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-MBR2535CTPbF
部品説明 Schottky Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-MBR2535CTPbF Datasheet, VS-MBR2535CTPbF PDF,ピン配置, 機能
VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
TO-220AB
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
Anode
2 Anode
1 Common 3
cathode
TO-220AB
2 x 15 A
35 V, 45 V
See Electrical table
40 mA at 125 °C
150 °C
Common cathode
16 mJ
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform (per device)
VRRM
IFRM TC = 130 °C (per leg)
IFSM tp = 5 μs sine
VF 30 Apk, TJ = 125 °C
TJ Range
VALUES
30
35/45
30
1060
0.73
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL VS-MBR2535CTPbF VS-MBR2535CT-N3 VS-MBR2545CTPbF VS-MBR2545CT-N3 UNITS
Maximum DC reverse
voltage
VR
35 35 45 45 V
Maximum working peak
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Peak repetitive forward current per leg
IFRM
Non-repetitive peak surge current
IFSM
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TEST CONDITIONS
TC = 130 °C, rated VR
Rated VR, square wave, 20 kHz, TC = 130 °C
Following any rated load
5 µs sine or 3 µs rect. pulse condition and with rated VRRM
applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
TJ = 25 °C, IAS = 2 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
15
30
30
1060
UNITS
A
150
16 mJ
2A
Revision: 30-Aug-11
1 Document Number: 94291
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-MBR2535CTPbF pdf, ピン配列
VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
Vishay Semiconductors
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
1000
100
10 TJ = 150 °C
1 TJ = 125 °C
0.1
TJ = 75 °C
0.01
TJ = 100 °C
TJ = 50 °C
0.001
TJ = 25 °C
0.0001
0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
TJ = 25 °C
100
0
10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
10
1
0.1
0.01
0.00001
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
1
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
10
Revision: 30-Aug-11
3 Document Number: 94291
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-MBR2535CTPbF 電子部品, 半導体
TO-220AB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
(6)
E
E2 (7)
Q
A
ØP
0.014 M B A M
B
Seating
A plane
A
A1
(6)
H1
(7)
(H1)
(6) D
Detail B
(E)
Thermal pad
D2 (6)
1 23
DD
CC
L1 (2)
D1
1 23
C
E1 (6)
3 x b 3 x b2
Detail B
L
Base metal
(b, b2)
Plating
2x e
e1
0.015 M B A M
Lead tip
cA
A2
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.25 4.65 0.167 0.183
A1 1.14 1.40 0.045 0.055
A2 2.56 2.92 0.101 0.115
b 0.69 1.01 0.027 0.040
b1
0.38 0.97 0.015 0.038
4
b2 1.20 1.73 0.047 0.068
b3
1.14 1.73 0.045 0.068
4
c 0.36 0.61 0.014 0.024
c1
0.36 0.56 0.014 0.022
4
D
14.85 15.25 0.585 0.600
3
D1 8.38 9.02 0.330 0.355
D2 11.68 12.88 0.460 0.507 6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
View A - A
c c1 (4)
b1, b3 (4)
Section C - C and D - D
Conforms to JEDEC outline TO-220AB
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN. MAX.
10.11 10.51
6.86 8.89
- 0.76
2.41 2.67
4.88 5.28
6.09 6.48
13.52 14.02
3.32 3.82
3.54 3.73
2.60 3.00
90° to 93°
INCHES
MIN. MAX.
0.398 0.414
0.270 0.350
- 0.030
0.095 0.105
0.192 0.208
0.240 0.255
0.532 0.552
0.131 0.150
0.139 0.147
0.102 0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
(7) Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
Document Number: 95222 For technical questions within your region, please contact one of the following:
Revision: 08-Mar-11
www.vishay.com
1

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部品番号部品説明メーカ
VS-MBR2535CTPbF

Schottky Rectifier ( Diode )

Vishay
Vishay


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