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VS-19TQ015S-M3 の電気的特性と機能

VS-19TQ015S-M3のメーカーはVishayです、この部品の機能は「High Performance Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VS-19TQ015S-M3
部品説明 High Performance Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VS-19TQ015S-M3 Datasheet, VS-19TQ015S-M3 PDF,ピン配置, 機能
www.vishay.com
VS-19TQ015S-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 19 A
Base
cathode
2
TO-263AB (D2PAK)
1
N/C
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-263AB (D2PAK)
19 A
15 V
0.36 V
522 mA at 100 °C
125 °C
Single die
6.75 mJ
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC®-JESD47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-19TQ015S-M3 Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
19 Apk, TJ = 75 °C
Range
VALUES
19
15
700
0.32
-55 to +125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-19TQ015S-M3
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 80 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 μs sine or 3 μs rect. pulse
Following any rated
IFSM load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS TJ = 25 °C, IAS = 1.50 A, L = 6 mH
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 3 x VR typical
VALUES
19
700
330
6.75
1.50
UNITS
A
A
mJ
A
Revision: 29-Jul-14
1 Document Number: 95730
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VS-19TQ015S-M3 pdf, ピン配列
www.vishay.com
10 000
1000
VS-19TQ015S-M3
Vishay Semiconductors
TJ = 25 °C
100
0
5 10 15 20 25 30
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.001
0.00001
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
.
100
105
19TQ015
100 RthJC (DC) = 1.50 °C/W
95
DC
90
85
80
0
5 10 15 20 25 30
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
10
D = 0.08
D = 0.17
8 D = 0.25
D = 0.33
D = 0.50
6
4
2
DC
RMS limit
0
0 4 8 12 16 20 24 28
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 29-Jul-14
3 Document Number: 95730
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


VS-19TQ015S-M3 電子部品, 半導体
www.vishay.com
D2PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2PAK (SMD-220)
(2)(3)
E
A
(3) L1
4
D
1 23
L2
BB
H
(2)
Detail A
2x e
2 x b2 C
2xb
0.010 M A M B
Lead tip
A
c2
B
A
(E)
A
c
± 0.004 M B
Gauge
plane
0° to 8°
E1
View A - A
H
L3
L
L4
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
Pad layout
11.00
(0.43)
MIN.
(D1) (3)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08)
MIN.
(3) 2.64 (0.103)
2.41 (0.096)
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
Plating
(4)
b1, b3
Base
Metal
B
Seating
plane
(c) c1 (4)
(b, b2)
Section B - B and C - C
Scale: None
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
A 4.06 4.83 0.160 0.190
D1
6.86 8.00 0.270 0.315
3
A1 0.00 0.254 0.000 0.010
E
9.65 10.67 0.380 0.420
2, 3
b 0.51 0.99 0.020 0.039
E1
7.90 8.80 0.311 0.346
3
b1
0.51 0.89 0.020 0.035
4
b2 1.14 1.78 0.045 0.070
e
2.54 BSC
0.100 BSC
H 14.61 15.88 0.575 0.625
b3
1.14 1.73 0.045 0.068
4
L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029
L1 - 1.65 - 0.066 3
c1
0.38 0.58 0.015 0.023
4
L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065
L3 0.25 BSC 0.010 BSC
D
8.51 9.65 0.335 0.380
2
L4 4.78 5.28 0.188 0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
1 Document Number: 95046
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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部品番号部品説明メーカ
VS-19TQ015S-M3

High Performance Schottky Rectifier

Vishay
Vishay


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