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VBT3045BP-M3 の電気的特性と機能

VBT3045BP-M3のメーカーはVishayです、この部品の機能は「Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VBT3045BP-M3
部品説明 Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VBT3045BP-M3 Datasheet, VBT3045BP-M3 PDF,ピン配置, 機能
www.vishay.com
VBT3045BP-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V at IF = 5 A
TMBS®
TO-263AB
K
PIN 1
PIN 2
2
1
K
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• TJ 200 °C max. in solar bypass application
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTCS
Package
TO-263AB
IF(DC)
VRRM
IFSM
VF at IF = 30 A
TOP max. (AC mode)
TJ max. (DC forward current)
Diode variation
30 A
45 V
200 A
0.51 V
150 °C
200 °C
Single die
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(DC) (1)
IFSM
Operating junction temperature range (AC mode)
Junction temperature in DC forward current
without reverse bias, t 1 h
TOP
TJ (2)
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test
VBT3045BP
45
30
200
- 40 to + 150
200
UNIT
V
A
A
°C
°C
Revision: 30-Apr-13
1 Document Number: 87965
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VBT3045BP-M3 pdf, ピン配列
www.vishay.com
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
20
TA = 25 °C
40
60
80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Typical Reverse Characteristics
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
VBT3045BP-M3
Vishay General Semiconductor
10
1
0.1
0.01
0.1
1
10 100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
100
0.1 1 10 100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
TO-263AB
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42 (10.66) MIN.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
Revision: 30-Apr-13
3 Document Number: 87965
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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部品番号部品説明メーカ
VBT3045BP-M3

Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


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