DataSheet.jp

VI20120S-E3 の電気的特性と機能

VI20120S-E3のメーカーはVishayです、この部品の機能は「High Voltage Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VI20120S-E3
部品説明 High Voltage Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




このページの下部にプレビューとVI20120S-E3ダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

VI20120S-E3 Datasheet, VI20120S-E3 PDF,ピン配置, 機能
V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20120S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF20120S
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
A
NC
VB20120S
NC K
A HEATSINK
VI20120S
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
20 A
120 V
200 A
0.73 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variation
Single die
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C
EAS
IRRM
Voltage rate of change (rated VR)
dV/dt
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC
Operating junction and storage temperature range
TJ, TSTG
V20120S
VF20120S VB20120S
120
20
VI20120S
200
130
0.5
10 000
1500
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 11-Sep-13
1 Document Number: 88993
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VI20120S-E3 pdf, ピン配列
V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3
www.vishay.com
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
Junction to Case
1
V(B,I)20120S
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
10
Junction to Case
1
VF20120S
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
Revision: 11-Sep-13
3 Document Number: 88993
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ VI20120S-E3 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
VI20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap