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PDF S2308 Data sheet ( Hoja de datos )
| Número de pieza | S2308 | |
| Descripción | N-channel SiC power MOSFET bare die | |
| Fabricantes | ROHM Semiconductor | |
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S2308
N-channel SiC power MOSFET bare die
VDSS
RDS(on) (Typ.)
ID
1200V
280mW
14A*1
Data Sheet
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
lInner circuit
(D)
(G)
(S)
(G) Gate
(D) Drain
(S) Source
*1 Body Diode
lApplication
• Solar inverters
• DC/DC converters
• Switch mode power supplies
• Induction heating
• Motor drives
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Pulsed drain current
Gate - Source voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
Tj
Tstg
Value
1200
14
35
-6 to 22
175
-55 to +175
Unit
V
A
A
V
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.A
1 page  
S2308
lElectrical characteristic curves
Fig.1 Typical Output Characteristics(I)
14
20V
12 18V
10 16V
8
6
4
14V
Ta=25ºC
Pulsed
12V
10V
2 VGS= 8V
0
0 2 4 6 8 10
Drain - Source Voltage : VDS [V]
Data Sheet
Fig.2 Typical Output Characteristics(II)
7
20V
6 18V
16V
5
14V
4
Ta=25ºC
Pulsed
12V
3
10V
2
1 VGS= 8V
0
012345
Drain - Source Voltage : VDS [V]
Fig.3 Tj = 150°C Typical Output
Characteristics(I)
14
Ta=150ºC 20V
12 Pulsed
18V
16V
10
14V
8
12V
6 10V
4
2 VGS= 8V
0
0 2 4 6 8 10
Drain - Source Voltage : VDS [V]
Fig.4 Tj = 150°C Typical Output
Characteristics(II)
7
Ta=150ºC 20V
6 Pulsed
18V
12V
16V
5
14V
10V
4
3
2 VGS= 8V
1
0
012345
Drain - Source Voltage : VDS [V]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/11
2014.05 - Rev.A
5 Page 
S2308
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Data Sheet
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit
Same type
device as
D.U.T.
Fig.3-2 Switching Waveforms
Eon = ID×VDS
Eoff = ID×VDS
VDS
Irr
Vsurge
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
11/11
2014.05 - Rev.A
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet S2308.PDF ] | |
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