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PDF S2301 Data sheet ( Hoja de datos )
| Número de pieza | S2301 | |
| Descripción | N-channel SiC power MOSFET bare die | |
| Fabricantes | ROHM Semiconductor | |
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S2301
N-channel SiC power MOSFET bare die
VDSS
RDS(on) (Typ.)
ID
1200V
80mW
40A*1
Data Sheet
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
lInner circuit
(D)
(G)
(S)
(G) Gate
(D) Drain
(S) Source
*1 Body Diode
lApplication
• Solar inverters
• DC/DC converters
• Switch mode power supplies
• Induction heating
• Motor drives
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Pulsed drain current
Gate - Source voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
Tj
Tstg
Value
1200
40
80
-6 to 22
175
-55 to +175
Unit
V
A
A
V
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.07 - Rev.A
1 page  
S2301
lElectrical characteristic curves
Fig.1 Typical Output Characteristics(I)
40
VGS= 20V
35 VGS= 18V
30
VGS= 16V
VGS= 14V
25
20
VGS= 12V
15
VGS= 10V
10
5 Ta = 25ºC
Pulsed
0
0 2 4 6 8 10
Drain - Source Voltage : VDS [V]
Data Sheet
Fig.2 Typical Output Characteristics(II)
20 VGS= 18V VGS= 16V
18 VGS= 20V
VGS= 14V
16
14 VGS= 12V
12
10
8
6 VGS= 10V
4
2
Ta = 25ºC
Pulsed
0
012345
Drain - Source Voltage : VDS [V]
Fig.3 Typical Output Characteristics(I)
40
VGS= 20V
35
VGS= 18V
30
25 VGS= 16V
20 VGS= 14V
15
VGS= 12V
VGS = 10V
10
5
0
0
Ta = 150ºC
Pulsed
2 4 6 8 10
Drain - Source Voltage : VDS [V]
Fig.4 Typical Output Characteristics(II)
20
18 VGS= 20V
16 VGS= 18V
VGS= 16V
14
12 VGS= 14V
VGS= 10V
10 VGS= 12V
8
6
4
2
Ta = 150ºC
Pulsed
0
012345
Drain - Source Voltage : VDS [V]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/11
2014.07 - Rev.A
5 Page 
S2301
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Data Sheet
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit
Same type
device as
D.U.T.
Fig.3-2 Switching Waveforms
Eon = ID×VDS
Eoff = ID×VDS
VDS
Irr
Vsurge
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
11/11
2014.07 - Rev.A
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet S2301.PDF ] | |
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