|
|
Datasheet RFLA1018S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RFLA1018S | High Linearity Amplifier RFLA1018S
Variable Gain, Low Noise, High Linearity Amplifier 1920MHz to 1980MHz
The RFLA1018S is an analog controlled voltage variable gain amplifier featuring high linearity and very low noise figure. This LNA with bypass mode and variable attenuator provides a minimum of 35dB of dynamic range. The | RF Micro Devices | amplifier |
RFL Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | RFL1N08 | 1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs Semiconductor
RFL1N08, RFL1N10
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Description
These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers f Intersil Corporation | ||
2 | RFL1N08 | Trans MOSFET N-CH 80V 1A 3-Pin TO-205AF New Jersey Semiconductor | ||
3 | RFL1N08L | Trans MOSFET N-CH 80V 1A 3-Pin TO-205AF New Jersey Semiconductor | ||
4 | RFL1N10 | 1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs Semiconductor
RFL1N08, RFL1N10
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Description
These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers f Intersil Corporation | ||
5 | RFL1N10 | 1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS New Jersey Semiconductor | ||
6 | RFL1N10L | 1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET RFL1N10L
September 1998
1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET
Description
This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, autom Intersil Corporation | ||
7 | RFL1N10L | 1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS New Jersey Semiconductor |
Esta página es del resultado de búsqueda del RFLA1018S. Si pulsa el resultado de búsqueda de RFLA1018S se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |