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Número de pieza | STH315N10F7-6 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STH315N10F7-2,
STH315N10F7-6
Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A
STripFET™ F7 Power MOSFETs
Datasheet - production data
Features
TAB
2
3
1
2
H PAK-2
TAB
7
1
H2PAK-6
Figure 1. Internal schematic diagram
Order codes
STH315N10F7-2
STH315N10F7-6
VDS RDS(on) max. ID
100 V 2.3 mΩ 180 A
• Designed for automotive applications and
AEC-Q101 qualified
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order codes
STH315N10F7-2
STH315N10F7-6
Table 1. Device summary
Marking
Package
315N10F7
H2PAK-2
H2PAK-6
September 2014
This is information on a product in full production.
DocID025090 Rev 4
Packaging
Tape and reel
1/19
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1 page STH315N10F7-2, STH315N10F7-6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
ISD Source-drain current
ISDM(1)
Source-drain current
(pulsed)
VSD(2) Forward on voltage
ISD=60 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=180 A,
di/dt = 100 A/µs,
VDD=80 V, Tj=150°C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulse duration = 300µs, duty cycle 1.5%
-
-
-
-
-
-
Typ. Max. Unit
180 A
720 A
1.5 V
85 ns
200 nC
4.7 A
DocID025090 Rev 4
5/19
19
5 Page STH315N10F7-2, STH315N10F7-6
Package mechanical data
Dim.
A
A1
C
e
E
F
H
H1
L
L1
L2
L3
L4
M
R
V
Table 8. H²PAK-2 mechanical data
mm
Min.
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.40
15.30
1.27
4.93
6.85
1.5
2.6
0.20
0°
Typ.
-
Max.
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.80
15.80
1.40
5.23
7.25
1.7
2.9
0.60
8°
DocID025090 Rev 4
11/19
19
11 Page |
Páginas | Total 19 Páginas | |
PDF Descargar | [ Datasheet STH315N10F7-6.PDF ] |
Número de pieza | Descripción | Fabricantes |
STH315N10F7-2 | N-channel Power MOSFET | STMicroelectronics |
STH315N10F7-6 | N-channel Power MOSFET | STMicroelectronics |
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