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PDF STB45N60DM2AG Data sheet ( Hoja de datos )
| Número de pieza | STB45N60DM2AG | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB45N60DM2AG
Automotive-grade N-channel 600 V, 0.085 Ω typ., 34 A
MDmesh™ DM2 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
Features
Order code
STB45N60DM2AG
VDS @
TJmax.
650 V
RDS(on)
max.
0.093 Ω
ID
34 A
PTOT
250 W
3
1
D2PAK
Figure 1: Internal schematic diagram
• Designed for automotive applications and
AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
Order code
STB45N60DM2AG
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packing
45N60DM2
D²PAK
Tape and reel
July 2015
DocID027981 Rev 1
This is information on a product in full production.
1/15
www.st.com
1 page  
STB45N60DM2AG
Symbol
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 34 A
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure
16: "Test circuit for
inductive load switching
and diode recovery
times")
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test
circuit for inductive load
switching and diode
recovery times")
Electrical characteristics
Min.
-
-
-
-
-
Typ.
120
0.6
Max.
34
136
1.6
Unit
A
A
V
ns
µC
- 10.4
A
- 240
- 2.4
ns
µC
- 20.5
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027981 Rev 1
5/15
5 Page 
STB45N60DM2AG
Package information
Figure 21: D²PAK (TO-263) recommended footprint (dimensions are in mm)
DocID027981 Rev 1
11/15
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STB45N60DM2AG.PDF ] | |
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