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PDF HCF4069U Data sheet ( Hoja de datos )

Número de pieza HCF4069U
Descripción Hex inverter
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! HCF4069U Hoja de datos, Descripción, Manual

HCF4069U
Hex inverter
Datasheet - production data
ESD performance
– HBM: 1 kV
– MM: 200 V
– CDM: 1 kV
SO14
Features
Medium-speed operation
tPD = 30 ns (typ.) at 10 V
Standardized symmetrical output
characteristics
Quiescent current specified up to 20 V
5 V, 10 V, and 15 V parametric ratings
Input leakage current II = 100 nA (max.) at
VDD = 18 V and TA = 25 ° C
100 % tested for quiescent current
Applications
Automotive
Industrial
Computer
Consumer
Description
The HCF4069U is a monolithic integrated circuit
fabricated in metal oxide semiconductor
technology available in the SO14 package. The
HCF4069U consists of six COS/MOS inverter
circuits. This device is intended for all general
purpose inverter applications where the medium
power TTL-drive and logic level conversion
capabilities of circuits such as HCF4049 hex
inverter/buffers are not required.
Table 1. Device summary table
Order code
Temperature range
Package
Packing
Marking
HCF4069UM013TR
-55 ° C to +125 ° C
HCF4069YUM013TR (1) -40 ° C to +125 ° C
SO14
SO14
(automotive grade)(1)
Tape and reel
HCF4069U
HCF4069Y
1. Qualification and characterization according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC
Q001 & Q002 or equivalent.
January 2014
This is information on a product in full production.
DocID2060 Rev 6
1/11
www.st.com

1 page




HCF4069U pdf
HCF4069U
3 Electrical characteristics
Electrical characteristics
Absolute maximum ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not implied. All voltage values are referred to
VSS pin voltage.
Symbol
Table 4. Absolute maximum ratings (AMR)
Parameter
Value
Unit
VDD Supply voltage
-0.5 to +22
V
VI
DC input voltage
-0.5 to VDD + 0.5
II DC input current
±10 mA
Power dissipation per package
PD Power dissipation per output transistor
200
mW
100
Top
Operating temperature
-55 to +125
°C
Tstg Storage temperature -65 to +150
Symbol
VDD
VI
Top
Table 5. Recommended operating conditions
Parameter
Value
Supply voltage
Input voltage
Operating temperature
3 to 20
0 to VDD
-55 to 125
Unit
V
°C
DocID2060 Rev 6
5/11
11

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HCF4069U arduino
HCF4069U
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