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PDF I2N60 Data sheet ( Hoja de datos )
| Número de pieza | I2N60 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | nELL | |
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SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
12A, 600Volts
DESCRIPTION
The Nell 12N60 is a three-terminal silicon
device with current conduction capability of
12A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 0.8Ω @ VGS = 10V
Ultra low gate charge(54nC max.)
Low reverse transfer capacitance
(CRSS = 25pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
12
600
0.8 @ VGS = 10V
54
D
GDS
TO-220AB
(12N60A)
GDS
TO-220F
(12N60AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
TC=25°C
TC=100°C
lAR=12A,RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy (Note 2)
lAS=12A, L = 10mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
TC=25°C
TO-220AB
TO-220F
TJ
TSTG
Operation junction temperature
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS=12A, VDD=50V, L= 10mH, RGS=25Ω, starting TJ = 25 °C.
3.ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ = 25°C.
www.nellsemi.com
Page 1 of 7
VALUE
600
600
±30
12
7.4
48
12
24
790
4.5
225
51
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
ºC
lbf.in (N.m)
1 page  
SEMICONDUCTOR
■ TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics
Top:
VGS
15V
10V
8V
101 7V
6.5V
6V
Bottom: 5.5V
100
1
0
-1
10-1
Notes:
1. 250µs pulse test
2. TC = 25°C
100 101
Drain Source voltage, VDS (V)
I2N60 Series RRooHHSS
Nell High Power Products
Fig.2 Transfer characteristics
101
100
10-1
2
150°C
25°C
-55°C
Notes:
1. VDS=50V
2. 250µs pulse width
4 6 8 10
Gate-Source voltage, VGS (V)
Fig.3 On-Resistance variation vs.
Drain current and Gate voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
VGS = 10V
VGS = 20V
5 10 15 20 25 30 35
Drain current, lD (A)
Fig.5 Capacitance characteristics
3000
2400
Ciss = Cgs +Cgd (Cds = shorted )
Coss = Cds +Cgs
Crss = Cgd
1800
1200
600
Coss
Crss
Ciss
Notes:
1. VGS=0V
2. f=1MHz
0
10-1
100 101
Drain-Source Voltage, VDS (V)
Fig.4 Body diode forward voltage variation vs
Source current and Temperature
101
150°C
100
25°C
Notes:
1. VGS=0V
2. 250µs pulse Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain voltage, VSD (V)
Fig.6 Gate charge characteristics
12
10 VDS=120V
VDS=300V
8 VDS=480V
6
4
2 Notes:
1. lD=12A
0
0 5 10 15 20 25 30 35 40 45
Total gate charge ,QG (nC)
www.nellsemi.com
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet I2N60.PDF ] | |
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