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FQA10N80C_F109 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 FQA10N80C_F109
部品説明 N-Channel QFET MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 

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FQA10N80C_F109 Datasheet, FQA10N80C_F109 PDF,ピン配置, 機能
FQA10N80C_F109
N-Channel QFET® MOSFET
800 V, 10 A, 1.1 Ω
Features
• 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A
• Low Gate Charge (Typ. 44 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
• RoHS compliant
March 2014
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology
has been especially tailored to reduce on-state resistance, and
to provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
D
G
D
S
TO-3PN
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
S
FQA10N80C_F109
800
10
6.32
40
± 30
920
10
24
4.0
240
1.92
-55 to +150
300
FQA10N80C_F109
0.52
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
oC/W
oC/W
©2006 Fairchild Semiconductor Corporation
FQA10N80C_F109 Rev. C2
1
www.fairchildsemi.com

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