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Datasheet FQA10N80C_F109 PDF ( 特性, スペック, ピン接続図 )

部品番号 FQA10N80C_F109
部品説明 N-Channel QFET MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 
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FQA10N80C_F109 Datasheet, FQA10N80C_F109 PDF,ピン配置, 機能
FQA10N80C_F109
N-Channel QFET® MOSFET
800 V, 10 A, 1.1 Ω
Features
• 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A
• Low Gate Charge (Typ. 44 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
• RoHS compliant
March 2014
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology
has been especially tailored to reduce on-state resistance, and
to provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
D
G
D
S
TO-3PN
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
S
FQA10N80C_F109
800
10
6.32
40
± 30
920
10
24
4.0
240
1.92
-55 to +150
300
FQA10N80C_F109
0.52
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
oC/W
oC/W
©2006 Fairchild Semiconductor Corporation
FQA10N80C_F109 Rev. C2
1
www.fairchildsemi.com

1 Page



FQA10N80C_F109 pdf, ピン配列
Typical Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
Bottom: 5.5V
100
10-1
10-1
Notes :
1. 250μs Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
2.5
2.0
VGS = 10V
1.5 VGS = 20V
1.0
Note : TJ = 25
0.5
0 5 10 15 20 25 30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3500
3000
2500
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
Ciss
2000
1500
1000
500
Coss
Notes :
1.
2.
Vf =GS1=M0HVz
Crss
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1.
2.
V25DS0μ=s50PVulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1.
2.
V25G0Sμ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 160V
10 VDS = 400V
VDS = 640V
8
6
4
2
Note : ID = 10A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2006 Fairchild Semiconductor Corporation
FQA10N80C_F109 Rev. C2
3
www.fairchildsemi.com


3Pages


FQA10N80C_F109 電子部品, 半導体
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2006 Fairchild Semiconductor Corporation
FQA10N80C_F109 Rev. C2
6
www.fairchildsemi.com

6 Page





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