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PDF SI1002R Data sheet ( Hoja de datos )
| Número de pieza | SI1002R | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 30 V (D-S) MOSFET
Si1002R
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω) MAX.
0.560 at VGS = 4.5 V
0.620 at VGS = 2.5 V
0.700 at VGS = 1.8 V
1.100 at VGS = 1.5 V
SC-75A
D
3
ID (A)
0.5
0.2
0.2
0.05
Qg (TYP.)
0.72 nC
1
G
Top View
2
S
Marking Code: L
Ordering Information:
Si1002R-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested
• Gate-source ESD protected: 1000 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load switch
• High speed switching
• DC/DC converters / boost converters
• For smart phones, tablet PCs and
mobile computing
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C) a
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current (t = 100 μs)
IDM
Continuous Source-Drain Diode Current
TA = 25 °C
IS
Maximum Power Dissipation a
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
30
±8
0.61 a,b
0.49 a,b
2
0.18 a,b
0.22 a,b
0.14 a,b
-55 to 150
UNIT
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
t≤5s
Steady State
SYMBOL
RthJA
TYP.
470
560
MAX.
565
675
UNIT
°C/W
S14-0770-Rev. A, 14-Apr-14
1
Document Number: 64257
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
Si1002R
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 0.25
1 Limited by RDS(on)*
Limited by I
DM
100 μs
0.2
1 ms
0.1 10 ms
100 ms
0.01 1 s
DC, 10 s
0.001
TA = 25 °C
BVDSS Limited
0.1 1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
0.15
0.1
0.05
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01 0.1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64257.
S14-0770-Rev. A, 14-Apr-14
5
Document Number: 64257
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SI1002R.PDF ] | |
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