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Datasheet NGTB30N60L2WG Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NGTB30N60L2WG | N-Channel IGBT Ordering number : ENA2308B
NGTB30N60L2WG
N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V
http://onsemi.com
Features
• IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications
• Maxim | ON Semiconductor | igbt |
NGT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NGTB05N60R2DT4G | IGBT, Insulated Gate Bipolar Transistor NGTB05N60R2DT4G
IGBT 600V, 8A, N-Channel
www.onsemi.com
Features
Reverse Conducting II IGBT IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V] IGBT tf=95ns (typ) Diode VF=1.5V (typ) [IF=5A] Diode trr=70ns (typ) 5s Short Circuit Capability
Applications
General Purpose I ON Semiconductor igbt | | |
2 | NGTB10N60FG | N-Channel IGBT Ordering number : ENA2283A
NGTB10N60FG
N-Channel IGBT
600V, 10A, VCE(sat);1.5V, TO-220F-3FS
http://onsemi.com
Features
• IGBT VCE (sat)=1.5V typ. (IC=10A, VGE=15V) • IGBT IC=20A (Tc=25°C) • Adaption of full isolation type package
• 5μs short circuit capability
• Diode VF=1.3V typ.(IF ON Semiconductor igbt | | |
3 | NGTB10N60R2DT4G | IGBT, Insulated Gate Bipolar Transistor NGTB10N60R2DT4G
IGBT 600V, 10A, N-Channel
www.onsemi.com
Features
Reverse Conducting II IGBT IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V] IGBT tf=65ns (typ) Diode VF=1.5V (typ) [IF=10A] Diode trr=90ns (typ) 5s Short Circuit Capability
Applications
General Purpose ON Semiconductor igbt | | |
4 | NGTB15N120FLWG | IGBT, Insulated Gate Bipolar Transistor NGTB15N120FLWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar ON Semiconductor igbt | | |
5 | NGTB15N120IHLWG | IGBT, Insulated Gate Bipolar Transistor NGTB15N120IHLWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited ON Semiconductor igbt | | |
6 | NGTB15N120LWG | IGBT, Insulated Gate Bipolar Transistor NGTB15N120LWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited f ON Semiconductor igbt | | |
7 | NGTB15N135IHRWG | IGBT, Insulated Gate Bipolar Transistor NGTB15N135IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal sw ON Semiconductor igbt | |
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Número de pieza | Descripción | Fabricantes | |
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