|
|
PDF MTEJ0P20KV8 Data sheet ( Hoja de datos )
| Número de pieza | MTEJ0P20KV8 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTEJ0P20KV8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C124V8
Issued Date : 2015.11.06
Revised Date :
Page No. : 1/10
P-Channel Enhancement Mode Power MOSFET
MTEJ0P20KV8 BVDSS
ID
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• G-S ESD protected diode
• Pb-free lead plating and halogen-free package
RDSON(Typ)
-200V
-3.9A @ VGS=-10V, TC=25°C
-1.3A @ VGS=-10V, TA=25°C
0.79Ω @ VGS=-10V, ID=-1A
0.84Ω@ VGS=-6V, ID=-1A
Equivalent Circuit
MTEJ0P20KV8
Outline
Pin 1
DFN3×3
G：Gate S：Source D：Drain
Ordering Information
Device
MTEJ0P20KV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTEJ0P20KV8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C124V8
Issued Date : 2015.11.06
Revised Date :
Page No. : 5/10
Typical Characteristics
8
10V
7 9V
6 8V
7V
5
4
3
2
1
0
0
Typical Output Characteristics
6V
5.5V
5V
-VGS=4.5V
4 8 12 16
-VDS, Drain-Source Voltage(V)
20
2000
1600
1200
Static Drain-Source On-State resistance vs Drain Current
In descending order
VGS= -4.5V
-6V
-10V
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
800 0.6
400 0.4
0
0.01
0.1 1
-ID, Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1500
1200
ID=-1A
900
600
300
0
0 2 4 6 8 10
-VGS, Gate-Source Voltage(V)
0.2
0
2 46 8
-IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2 VGS=-10V, ID=-1A
1.6
1.2
0.8
0.4 RDS(ON)@Tj=25°C : 0.79Ω typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTEJ0P20KV8
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTEJ0P20KV8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTEJ0P20KV8 | P-Channel Enhancement Mode MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |