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PDF KF16N50P Data sheet ( Hoja de datos )
| Número de pieza | KF16N50P | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
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SEMICONDUCTOR
TECHNICAL DATA
KF16N50P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=500V, ID=16A
Drain-Source ON Resistance :
RDS(ON)(Max)=0.36 @VGS=10V
Qg(typ.)= 40.8nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KF16N50P KF16N50F
Drain-Source Voltage
VDSS
500
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
16 16*
9.7 9.7*
45 45*
870
22.5
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
225
1.78
51
0.41
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.58
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.43
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF16N50P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KF16N50F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
PIN CONNECTION
D
TO-220IS (1)
G
2008. 10. 2
S
Revision No : 1
1/7
1 page  
KF16N50P/F
Fig12. Transient Thermal Response Curve
(KF16N50P)
100
Duty=0.5
10-1 0.2
0.1
0.05
0.02
10-2
0.01
10-5
Single Pulse
10-4
10-3 10-2
TIME (sec)
PDM
t1
t2
- Rth(j-c) = 0.58 C/W Max.
- Duty Factor, D= t1/t2
10-1 100 101
Fig13. Transient Thermal Response Curve
(KF16N50F)
100 Duty=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3
10-2
TIME (sec)
PDM
t1
t2
- Rth(j-c) = 2.43 C/W Max.
- Duty Factor, D= t1/t2
10-1 100 101
2008. 10. 2
Revision No : 1
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KF16N50P.PDF ] | |
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