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VIT10202C-M3 の電気的特性と機能

VIT10202C-M3のメーカーはVishayです、この部品の機能は「Dual High Voltage Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 VIT10202C-M3
部品説明 Dual High Voltage Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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VIT10202C-M3 Datasheet, VIT10202C-M3 PDF,ピン配置, 機能
VT10202C-M3, VBT10202C-M3, VIT10202C-M3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TMBS ®
TO-220AB
VT10202C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
TO-262AA
K
FEATURES
• Trench MOS Schottky technology generation 2
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB and TO-262AA
package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
2
1
VBT10202C
PIN 1
K
PIN 2
HEATSINK
3
2
1
VIT10202C
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
VRRM
200 V
IFSM
100 A
VF at IF = 5 A (TA = 125 °C)
0.65 V
TJ max.
Package
175 °C
TO-220AB, TO-263AB,
TO-262AA
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
per device
per diode
IF(AV)
Maximum DC reverse voltage
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
VDC
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
VT10202C
VBT10202C
200
10
5
160
100
10 000
-40 to +175
VIT10202C
UNIT
V
A
V
A
V/μs
°C
Revision: 24-Apr-14
1 Document Number: 87796
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





VIT10202C-M3 pdf, ピン配列
VT10202C-M3, VBT10202C-M3, VIT10202C-M3
www.vishay.com
Vishay General Semiconductor
100
TA = 175 °C
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1 TA = 25 °C
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100000
10000
1000
100
TA = 175 °C
TA = 150 °C
TA = 125 °C
TA = 100 °C
10
1
TA = 25 °C
0.1
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
1000
100
TJ = 25 °C
f = 1MHz
Vsig = 50 mVp-p
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.1
0.01
0.1 1
10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Device
Revision: 24-Apr-14
3 Document Number: 87796
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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部品番号部品説明メーカ
VIT10202C-M3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


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