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Datasheet 1SS196 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
11SS196SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 Switching Diode FEATURES Low forward voltage Fast reverse recovery time MARKING: G3 G3 SOT-23 1 3 2 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward C
JCET
JCET
diode
21SS196DIODE

RoHS 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 ONIC CMarking:G3 2.9
WEJ
WEJ
diode
31SS196Surface Mount Switching Diodes

Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202, Me
WEITRON
WEITRON
diode
41SS196Switching Diodes

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS196 Features • Low Leakage Current • Surface Mount SOT-23 Package • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Le
MCC
MCC
diode
51SS196Switching Diodes

1. N.C. 2. ANODE 3. CATHODE Features — Low forward voltage : VF(3)=0.9V(typ.) — Fast reverse recovery time : trr=1.6ns(typ.) MARKING: G3 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Pow
LGE
LGE
diode


1SS Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
11SS104SILICON PLANAR TYPE DIODE

Toshiba Semiconductor
Toshiba Semiconductor
diode
21SS106SILICON SCHOTTKY BARRIER DIODE

1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction T
SEMTECH
SEMTECH
diode
31SS106Silicon Schottky Barrier Diode

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z (Previous: ADE-208-153A) Rev.2.00 Oct.23.2003 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.. Ordering Information Type No. 1S
Renesas
Renesas
diode
41SS106SMALL SIGNAL SCHOTTKY DIODES

R SEMICONDUCTOR 1SS106 SMALL SIGNAL SCHOTTKY DIODES FEATURES Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits small current rectifier High temperature solderi
JINAN JINGHENG ELECTRONICS
JINAN JINGHENG ELECTRONICS
diode
51SS106Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A (Z) Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No. 1SS106 Cathode White 2nd band Wh
Hitachi Semiconductor
Hitachi Semiconductor
diode
61SS108Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching

1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-154A (Z) Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No. 1SS108 Cathode White 2nd band Black Mark H
Hitachi Semiconductor
Hitachi Semiconductor
diode
71SS110Silicon Epitaxial Planar Diode for Tuner Band Switch

1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B (Z) Rev. 2 Features • Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information T
Hitachi Semiconductor
Hitachi Semiconductor
diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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