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1SS187 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 1SS187
部品説明 SILICON EPITAXIAL PLANAR DIODE
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 

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1SS187 Datasheet, 1SS187 PDF,ピン配置, 機能
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS187
Ultra High Speed Switching Application
1SS187
Unit: mm
z Small package
: SC-59
z Low forward voltage
: VF (3) = 0.92V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 2.2pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
IFM
300 mA
Average forward current
IO 100 mA
Surge current (10ms)
IFSM
2A
Power dissipation
P 150 mW
Junction temperature
Storage temperature range
Tj 125 °C JEDEC
Tstg
55 to 125
°C
JEITA
TOSHIBA
-
SC-59
1-3G1D
Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.012g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery tme
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF =1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
VR = 0, f = 1MHz
IF = 10mA (Fig.1)
Min Typ Max Unit
0.61
0.74
V
0.92 1.20
― ― 0.1
μA
― ― 0.5
2.2 4.0 pF
1.6 4.0 ns
Marking
Start of commercial production
1982-06
1 2014-03-01

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