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Datasheet 1SS181 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1SS181 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS181
Switching Diodes
FEATURES y Low forward voltage y Fast reverse recovery time
MARKING: A3
A3 A3
SOT-23
1 3
2
Solid dot = Green molding compound device,if none,the normal device.
Maximum Ratings @Ta=25℃ | JCET | diode |
2 | 1SS181 | Ultra High Speed Switching Diode WILLAS
SCS501V
VOLTAGE 40V 0.1AMP Schottky Barrier Rectifiers
Ultra High Speed Switching
.006 (0.15) max.
Application Pb Free Product
FEATURES
1SS181
SOD-323(SC-76)
* ExtremelyzLoLwoVwFforward voltage : VF (3) = 0.92V (typ.) * ExtremelyzthFinapsatcrkeavgeerse recovery time : trr = 1.6ns (typ.) | WILLAS | diode |
3 | 1SS181 | High Speed Switching Diodes MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
x Low Forward Voltage x Low Leakage Current x Surface Mount SOT-23 Package • Epoxy meets UL 94 V-0 flammability rating • Moisture Sens | MCC | diode |
4 | 1SS181 | SWITCHING DIODE RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 SWITCHING DIODE
1SS181
FEATURES
* Power dissipation PD: 150 mW(Tamb=25OC)
* Forward current IF: 100 mA
* Reverse voltage VR: 80 V
* Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC
MECHANICAL DATA
* Case: Molded plastic
* | RECTRON | diode |
5 | 1SS181 | Surface Mount Switching Diodes Surface Mount Switching Diodes
P b Lead(Pb)-Free
Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications
Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202, Me | WEITRON | diode |
1SS Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1SS104 | SILICON PLANAR TYPE DIODE Toshiba Semiconductor diode | | |
2 | 1SS106 | SILICON SCHOTTKY BARRIER DIODE 1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Average Forward Current Junction T SEMTECH diode | | |
3 | 1SS106 | Silicon Schottky Barrier Diode 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0125-0200Z (Previous: ADE-208-153A)
Rev.2.00 Oct.23.2003
Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal..
Ordering Information
Type No. 1S Renesas diode | | |
4 | 1SS106 | SMALL SIGNAL SCHOTTKY DIODES R SEMICONDUCTOR
1SS106
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits small current rectifier High temperature solderi JINAN JINGHENG ELECTRONICS diode | | |
5 | 1SS106 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS106 Cathode White 2nd band Wh Hitachi Semiconductor diode | | |
6 | 1SS108 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS108
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-154A (Z) Rev. 1 Features
• Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.
Ordering Information
Type No. 1SS108 Cathode White 2nd band Black Mark H Hitachi Semiconductor diode | | |
7 | 1SS110 | Silicon Epitaxial Planar Diode for Tuner Band Switch 1SS110
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-179B (Z) Rev. 2 Features
• Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
T Hitachi Semiconductor diode | |
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