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VS-20TQ045SPbFのメーカーはVishayです、この部品の機能は「High Performance Schottky Rectifier」です。 |
部品番号 | VS-20TQ045SPbF |
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部品説明 | High Performance Schottky Rectifier | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとVS-20TQ045SPbFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
VS-20TQ035SPbF, VS-20TQ040SPbF, VS-20TQ045SPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
Base
cathode
2
TO-263AB (D2PAK)
13
N/C Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
TO-263AB (D2PAK)
20 A
35 V, 40 V, 45 V
0.51 V
105 mA at 125 °C
150 °C
Single die
27 mJ
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-20TQ... Schottky rectifier series has been optimized
for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
Range
tp = 5 μs sine
20 Apk, TJ = 125 °C
Range
VALUES
20
35 to 45
1800
0.51
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-20TQ035SPbF
35
VS-20TQ040SPbF
40
VS-20TQ045SPbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current,
see fig. 5
IF(AV)
Maximum peak one cycle non-repetitive
surge current, see fig. 7
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TC = 116 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 4 A, L = 3.40 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
20
1800
400
27
4
UNITS
A
mJ
A
Revision: 08-Dec-14
1 Document Number: 94168
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page VS-20TQ035SPbF, VS-20TQ040SPbF, VS-20TQ045SPbF
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 150 °C
10 TJ = 125 °C
TJ = 25 °C
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
100
10
1
0.1
0.01
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.001
0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
10 000
TJ = 25 °C
100
0
10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.001
0.00001
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
10
100
Revision: 08-Dec-14
3 Document Number: 94168
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages D2PAK, TO-262
Outline Dimensions
Vishay High Power Products
DIMENSIONS FOR D2PAK in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
(3) L1
(2)(3)
E
4
A
D
1 23
L2
BB
H
(2)
Detail A
2x e
2 x b2 C
2xb
0.010 M A M B
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
A
c2
B
A
(E)
A
c
± 0.004 M B
Gauge
plane
0° to 8°
E1
View A - A
H
L3
L
A1
L4
Detail “A”
Rotated 90 °CW
Scale: 8:1
Pad layout
11.00
(0.43)
MIN.
(D1) (3)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08)
MIN.
(3) 2.64 (0.103)
2.41 (0.096)
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
Plating
(4)
b1, b3
Base
Metal
B
Seating
plane
(c) c1 (4)
(b, b2)
Section B - B and C - C
Scale: None
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
A 4.06 4.83 0.160 0.190
A1 0.00 0.254 0.000 0.010
b 0.51 0.99 0.020 0.039
b1
0.51 0.89 0.020 0.035
4
b2 1.14 1.78 0.045 0.070
b3
1.14 1.73 0.045 0.068
4
c 0.38 0.74 0.015 0.029
c1
0.38 0.58 0.015 0.023
4
c2 1.14 1.65 0.045 0.065
D
8.51 9.65 0.335 0.380
2
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not
exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
SYMBOL
D1
E
E1
e
H
L
L1
L2
L3
L4
MILLIMETERS
MIN. MAX.
6.86 8.00
9.65 10.67
7.90 8.80
2.54 BSC
14.61 15.88
1.78 2.79
- 1.65
1.27 1.78
0.25 BSC
4.78 5.28
INCHES
MIN. MAX.
0.270 0.315
0.380 0.420
0.311 0.346
0.100 BSC
0.575 0.625
0.070 0.110
- 0.066
0.050 0.070
0.010 BSC
0.188 0.208
NOTES
3
2, 3
3
3
(7) Outline conforms to JEDEC outline TO-263AB
Document Number: 95014
Revision: 31-Mar-09
For technical questions concerning discrete products, contact: [email protected]
For technical questions concerning module products, contact: [email protected]
www.vishay.com
1
6 Page | |||
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部品番号 | 部品説明 | メーカ |
VS-20TQ045SPbF | High Performance Schottky Rectifier | Vishay |