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MMDF4207 の電気的特性と機能

MMDF4207のメーカーはON Semiconductorです、この部品の機能は「Dual P-Channel Field Effect Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMDF4207
部品説明 Dual P-Channel Field Effect Transistors
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MMDF4207 Datasheet, MMDF4207 PDF,ピン配置, 機能
MMDF4207
Dual P-Channel
Field Effect Transistors
Medium Power Surface Mount Products
These devices are an advanced series of power MOSFETs which
utilize ON Semiconductor’s latest MOSFET technology process to
achieve the lowest possible onresistance per silicon area. They are
capable of withstanding high energy in the avalanche and
commutation modes and the draintosource diode has a very low
reverse recovery time. These devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dcdc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
Ultra Low RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
Characterized Over a Wide Range of Power Ratings
Logic Level Gate Drive Can Be Driven by
Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
IDSS Specified at Elevated Temperature
Miniature SO8 Surface Mount Package
Saves Board Space
http://onsemi.com
DUAL POWER MOSFET
6.2 AMPERES
20 VOLTS
RDS(on) = 0.033 Ω
D
G
S
8
1
SO8
CASE 751
STYLE 11
SOURCE 1
GATE 1
SOURCE 2
GATE 2
18
27
36
45
TOP VIEW
DRAIN 1
DRAIN 1
DRAIN 2
DRAIN 2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 3
1
Publication Order Number:
MMDF4207/D

1 Page





MMDF4207 pdf, ピン配列
MMDF4207
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage(1)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 55°C)
GateBody Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
Gate Threshold Voltage(1)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
Static DraintoSource OnResistance(1)
(VGS = 4.5 Vdc, ID = 6.2 Adc)
(VGS = 2.5 Vdc, ID = 5.0 Adc)
Forward Transconductance (VDS = 10 Vdc, ID = 6.2 Adc)(1)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 15 Vdc, VGS = 0 V,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS(2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDS = 10 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)(1)
Gate Charge
(VDS = 10 Vdc, ID = 6.2 Adc,
VGS = 4.5 Vdc)(1)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 1.7 Adc, VGS = 0 Vdc)(1)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)(1)
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
(1) Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Repetitive rating; pulse width limited by max. junction temperature.
Min
20
0.6
Typ Max Unit
Vdc
−−
14.9 mV/°C
μAdc
1.0
5.0
100 nAdc
Vdc
−−
2.6 mV/°C
mΩ
22 33
34 50
15 Mhos
1210
560
340
1694
784
476
pF
14 21
20 64
68 74
84 127
27 31
4.5
11.7
9.3
ns
nC
0.87 1.2 Vdc
0.72
43 80 ns
20
23
0.04
μC
http://onsemi.com
3


3Pages


MMDF4207 電子部品, 半導体
MMDF4207
6
QT
5
VDS
4
12 1000
10
VGS 8
TJ = 25°C
ID = 1.0 A
VDD = 10 V
VGS = 10 V
3 Q1
Q2
6
2
Q3
1
TJ = 25°C
VGS = 4.5 V
VDS = 10 V
ID = 6.2 A
4
2
00
0 5 10 15 20 25 30
QG, TOTAL GATE CHARGE (nC)
100
10
1
tf
td(off)
tr
td(on)
10
RG, GATE RESISTANCE (OHMS)
100
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
DRAINTOSOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 16. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor’s standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
5
VGS = 0 V
TJ = 25°C
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
http://onsemi.com
6

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部品番号部品説明メーカ
MMDF4207

Dual P-Channel Field Effect Transistors

ON Semiconductor
ON Semiconductor


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