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V30DM120C-M3 の電気的特性と機能

V30DM120C-M3のメーカーはVishayです、この部品の機能は「Dual Trench MOS Barrier Schottky Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 V30DM120C-M3
部品説明 Dual Trench MOS Barrier Schottky Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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V30DM120C-M3 Datasheet, V30DM120C-M3 PDF,ピン配置, 機能
www.vishay.com
V30DM120C-M3, V30DM120CHM3
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.51 V at IF = 5 A
TMBS ® eSMP® Series
TO-263AC (SMPD)
K
1
2
Top View
Bottom View
V30DM120C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A (TA = 125 °C)
TJ max.
Package
2 x 15 A
120 V
150 A
0.67 V
175 °C
TO-263AC (SMPD)
Diode variations
Dual common cathode
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, inductrial, and
automotive application.
MECHANICAL DATA
Case: TO-263AC SMPD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V30DM120C
120
30
15
150
10 000
-40 to +175
UNIT
V
A
A
V/μs
°C
Revision: 08-Apr-15
1 Document Number: 89990
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





V30DM120C-M3 pdf, ピン配列
www.vishay.com
V30DM120C-M3, V30DM120CHM3
Vishay General Semiconductor
100
TA = 175 °C
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
Junction to Ambient
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
100
TA = 175 °C
10 TA = 150 °C
TA = 125 °C
1 TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
50
45 Epoxy printed circuit
board FR4 copper
thickness = 70 μm
40
35
30
25
S(cm 2)
20
123456789
Copper Pad Areas (cm2)
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
100
10
0.1 1 10 100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 08-Apr-15
3 Document Number: 89990
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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部品番号部品説明メーカ
V30DM120C-M3

Dual Trench MOS Barrier Schottky Rectifier

Vishay
Vishay


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