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PDF VS-FA40SA50LC Data sheet ( Hoja de datos )
| Número de pieza | VS-FA40SA50LC | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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VS-FA40SA50LC
Vishay Semiconductors
Power MOSFET, 40 A
SOT-227
PRODUCT SUMMARY
VDSS
RDS(on)
ID
Type
Package
500 V
0.106
40 A
Modules - MOSFET
SOT-227
FEATURES
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
• Low drain to case capacitance
• Low internal inductance
• UL approved file E78996
• Designed for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third Generation Power MOSFETs from Vishay
Semiconductors provide the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
of the SOT-227 contribute to its wide acceptance
throughout the industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous drain current at VGS 10 V
Pulsed drain current
Power dissipation
Gate to source voltage
Single pulse avalanche energy
Repetitive avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
ID
IDM (1)
PD
VGS
EAS (2)
IAR (1)
EAR (1)
dV/dt (3)
TC = 25 °C
TC = 90 °C
TC = 25 °C
TC = 90 °C
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
TJ, TStg
VISO
M4 screw, on terminals and heatsink
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 18)
(2) Starting TJ = 25 °C, L = 500 μH, Rg = 2.4 , IAS = 40 A (see fig. 18)
(3) ISD 40 A, dIF/dt 200 A/μs, VDD V(BR)DSS, TJ 150 °C
MAX.
40
29
150
543
261
± 20
400
13
42
10
- 55 to + 150
2.5
1.3
UNITS
A
W
V
mJ
A
mJ
V/ns
°C
kV
Nm
Revision: 13-Aug-13
1 Document Number: 94803
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
1
td(on)
0.1 td(off)
0.01
0
tf
tr
10 20 30 40
Drain to source current - IDS (A)
50
Fig. 11 - Typical MOSFET Switching Time vs. IDS, TJ = 125 °C,
VDD = 250 V, VGS = 10 V, L = 500 μH, RG = 2.4
Diode used 60APH06
1
VS-FA40SA50LC
Vishay Semiconductors
1
td(on)
td(off)
tr
0.1 tf
0.01
0
10 20 30 40 50 60
RG (Ω)
Fig. 12 - Typical MOSFET Switching Time vs. RG, TJ = 125 °C,
IDS = 40 A , VDD = 250 V, VGS = 10 V, L = 500 μH
Diode used 60APH06
0.1
0.01
0.001
0.00001
Notes:
0.75
0.50
0.25
0.1
0.05
0.02
DC
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 13 - Maximum Thermal Impedance ZthJC Characteristics, MOSFET
1
16000
14000
12000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
8000
Ciss
6000
4000
2000
Coss
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig. 14 - Typical Capacitance vs. Drain to Source Voltage
20 ID = 38A
16
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
FOR TEST CIRCUIT
SEE FIGURE 19
0
0 80 160 240 320 400
QG , Total Gate Charge (nC)
Fig. 15 - Typical Gate Charge vs.
Gate to Source Voltage
Revision: 13-Aug-13
5 Document Number: 94803
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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| PDF Descargar | [ Datasheet VS-FA40SA50LC.PDF ] | |
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