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Datasheet MTB9N25E Equivalent ( PDF ) |
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2 | MTB9N25E | TMOS POWER FET 9.0 AMPERES 250 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB9N25E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
Designer's
MTB9N25E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger |
Motorola Semiconductors |
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1 | MTB9N25E | High Energy Power FET MTB9N25E
Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require |
ON Semiconductor |
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SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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