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FDZ4670SのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel PowerTrench SyncFET」です。 |
部品番号 | FDZ4670S |
| |
部品説明 | N-Channel PowerTrench SyncFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDZ4670Sダウンロード(pdfファイル)リンクがあります。 Total 7 pages
March 2008
FDZ4670S
N-Channel PowerTrench® SyncFET TM
30V, 25A, 2.4mΩ
tm
Features
Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A
Max rDS(on) = 4.0mΩ at VGS = 4.5V, ID = 19A
Ultra-thin package: less than 0.85mm height when mounted to
PCB
Outstanding thermal transfer characteristics
Ultra-low gate charge x rDS(on) product
RoHS Compliant
General Description
Combining Fairchild's 30V PowerTrench® process with
state-of-the-art BGA packaging, the FDZ4670S minimizes both
PCB space and rDS(on). This BGA MOSFET embodies a
breakthrough in packaging technology which enables the device
to combine excellent thermal transfer characteristics, high
current handling capacity, ultra-low profile packaging, low gate
charge and low rDS(on) incorporating SyncFET technology. This
device has the added benefit of an efficient monolithic Schottky
body diode to reduce Trr and diode forward voltage.
This MOSFET feature faster switching and lower gate charge
than other MOSFETs with comparable rDS(on) specifications
resulting in DC/DC power supply designs and POL converters
with higher overall efficiency.
Applications
DC - DC Conversion
POL converters
Index slot
D
G
Bottom
FLFBGA 3.5X4.0
Top
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
S
Ratings
30
±20
25
107
2.5
1.25
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
0.85
50
100
°C/W
Device Marking
4670S
Device
FDZ4670S
Package
FLFBGA 3.5X4.0
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDZ4670S Rev.B1
1
www.fairchildsemi.com
1 Page Typical Characteristics TJ = 25°C unless otherwise noted
100
VGS = 4.5V
VGS = 3.5V
80
60 VGS = 6V
VGS = 10V
40
20
0
0.0
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
VGS = 3V
0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 1. On-Region Characteristics
5
4 VGS = 3V
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
3 VGS = 3.5V
2
VGS = 4.5V
VGS = 6V
1
VGS = 10V
0
0 20 40 60 80 100
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 25A
VGS = 10V
1.4
1.2
1.0
0.8
10
8
6
4
TJ = 25oC
2
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
ID = 25A
TJ = 125oC
0.6
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
0
23456789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
100
PULSE DURATION = 300µs
DUTY CYCLE = 2%MAX
80
VDS = 5V
60
TJ = 125oC
40
TJ = 25oC
20
TJ = -55oC
0
123
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4
100
10
1
0.1
0.01
VGS = 0V
TJ = 125oC
TJ = 25oC
TJ = -55oC
0.001
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.0
©2008 Fairchild Semiconductor Corporation
FDZ4670S Rev.B1
3
www.fairchildsemi.com
3Pages Dimensional Outline and Pad Layout
©2008 Fairchild Semiconductor Corporation
FDZ4670S Rev.B1
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDZ4670 | N-Channel PowerTrench MOSFET BGA | Fairchild Semiconductor |
FDZ4670S | N-Channel PowerTrench SyncFET | Fairchild Semiconductor |