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FDZ4670 の電気的特性と機能

FDZ4670のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel PowerTrench MOSFET BGA」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDZ4670
部品説明 N-Channel PowerTrench MOSFET BGA
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDZ4670 Datasheet, FDZ4670 PDF,ピン配置, 機能
May 2007
FDZ4670
N-Channel PowerTrench®MOSFET BGA
30V, 25A, 2.5mΩ
tm
Features
„ Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 25A
„ Max rDS(on) = 4.5mΩ at VGS = 4.5V, ID = 18.5A
„ Ultra-thin package: less than 0.85mm height when mounted to
PCB
„ Outstanding thermal transfer characteristics
„ Ultra-low gate charge x rDS(on) product
„ RoHS Compliant
General Description
Combining Farichild’s 30V PowerTrench process with state-of-
the-art BGA packaging, the FDZ4670 minimize both PCB space
and rDS(on) . This BGA MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, high current handing
capacity, ultra-low profile packaging, low gate charge and low
rDS(on).
This MOSFET feature faster switching and lower gate charge
than other MOSFETs with comparable rDS(on) specifications
resulting in DC/DC power supply designs and POL converters
with higher overall efficiency.
Applications
„ DC - DC Conversion
„ POL converters
Index slot
D
G
Bottom
Top
FLFBGA 3.5X4.0
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
S
Ratings
30
±20
25
60
2.5
1.25
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
50
100
0.85
°C/W
Device Marking
4670
Device
FDZ4670
Package
FLFBGA 3.5X4.0
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDZ4670 RevD
1
www.fairchildsemi.com

1 Page





FDZ4670 pdf, ピン配列
Typical Characteristics TJ = 25°C unless otherwise noted
60
VGS = 10V
50 VGS = 6V
VGS = 4.5V
40 VGS = 3.5V
VGS = 3V
30
20
10 PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
0
0.0 0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.0
4.5
VGS = 3V
4.0
3.5
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
3.0
VGS = 3.5V
2.5
2.0 VGS = 4.5V VGS = 6V
1.5
1.0
0.5
0
10 20 30 40
ID, DRAIN CURRENT(A)
VGS = 10V
50 60
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.5
ID = 25A
1.4 VGS = 10V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
10
9
ID = 25A
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
8
7
6
5
4 TJ = 125oC
3
2 TJ = 25oC
1
246
8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
60
PULSE DURATION = 300μs
50 DUTY CYCLE = 2.0%MAX
VDS = 5V
40
TJ = 125oC
30
20 TJ = 25oC
10
0
1.0
TJ = -55oC
1.5 2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4.0
60
VGS = 0V
10
TJ = 125oC
1
0.1
TJ = 25oC
0.01
TJ = -55oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2007 Fairchild Semiconductor Corporation
FDZ4670 Rev.D
3
www.fairchildsemi.com


3Pages


FDZ4670 電子部品, 半導体
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx®
HiSeC
Across the board. Around the world™ i-Lo
Power-SPM™
PowerTrench®
TinyBuck™
TinyLogic®
ActiveArray™
Bottomless™
ImpliedDisconnect™
IntelliMAX™
Programmable Active Droop™ TINYOPTO™
QFET®
TinyPower™
Build it Now™
ISOPLANAR™
QS™
TinyWire™
CoolFET™
MICROCOUPLER™
QT Optoelectronics™
TruTranslation™
CorePLUS™
CROSSVOLT
MicroPak™
MICROWIRE™
Quiet Series™
RapidConfigure™
µSerDes™
UHC®
CTL™
Motion-SPM™
RapidConnect™
UniFET™
Current Transfer Logic™
MSX™
ScalarPump™
VCX™
DOME™
E2CMOS™
EcoSPARK®
EnSigna™
FACT Quiet Series™
FACT®
FAST®
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR®
PACMAN™
PDP-SPM™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Wire™
FASTr™
FPS™
FRFET®
GlobalOptoisolator
GTO™
POP™
Power220®
Power247®
PowerEdge™
PowerSaver™
SyncFET™
TCM™
The Power Franchise®
tm
TinyBoost™
tm
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in a significant
injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner
without notice.
This datasheet contains preliminary data; supplementary data will
be published at a later date. Fairchild Semiconductor reserves the
right to make changes at any time without notice to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at any time
without notice to improve design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor.The datasheet is printed
for reference information only.
©2007 Fairchild Semiconductor Corporation
FDZ4670 Rev.D
Rev. I27
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDZ4670

N-Channel PowerTrench MOSFET BGA

Fairchild Semiconductor
Fairchild Semiconductor
FDZ4670S

N-Channel PowerTrench SyncFET

Fairchild Semiconductor
Fairchild Semiconductor


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